摘要
The performance and thermal stability of the ultrathin nickel-molybdenum- phosphorus (Ni-Mo-P) barrier layer deposited by the nonisothermal deposition method in acid electroless bath have been clearly investigated. The as-deposited Ni-Mo-P film (15 nm) has a low resistivity, contains high amounts of Mo (6.7 atom %) and P (25 atom %), and has an amorphous structure. The barrier capability of this Ni-Mo-P film remains stable up to 650°C for 1 h annealing. This reveals that the resistance of Ni-Mo-P barrier film against Cu diffusion is very prominent, and this method for depositing Ni-Mo-P films is extremely promising for ultralarge-scale integration application.
原文 | 英語 |
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頁(從 - 到) | D30-D33 |
期刊 | Electrochemical and Solid-State Letters |
卷 | 11 |
發行號 | 2 |
DOIs | |
出版狀態 | 已發佈 - 2008 |
ASJC Scopus subject areas
- 一般化學工程
- 電氣與電子工程
- 一般材料科學
- 電化學
- 物理與理論化學