Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method

Shin Chuan Chiang; Chin Chih Yu; Chien Yie Tsay; Bor Chuan Chuang; Min Chi Wang; Chung Kwei Lin; Ming Ying Ma; Jiunn Yan Ou

Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method

Shin Chuan Chiang, Chin Chih Yu, Chien Yie Tsay, Bor Chuan Chuang, Min Chi Wang, Chung Kwei Lin, Ming Ying Ma, Jiunn Yan Ou

研究成果: 書貢獻/報告類型 › 會議貢獻

摘要

Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn 1-xMgxO (x = 0 to 0.36) thin films were prepared and TFTs with Zn1-xMgxO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn 1-xMgxO TFTs were demonstrated to have n-type enhancement behavior.

原文	英語
主出版物標題	IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
頁面	884-887
頁數	4
出版狀態	已發佈 - 2007
對外發佈	是
事件	International Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, 臺灣持續時間: 7月 3 2007 → 7月 6 2007

其他

其他	International Display Manufacturing Conference and Exhibition, IDMC 2007
國家/地區	臺灣
城市	Taipei
期間	7/3/07 → 7/6/07

ASJC Scopus subject areas

電氣與電子工程
工業與製造工程
電子、光磁材料

其它文件與鏈接

引用此

@inproceedings{659c053c6c7b4b43b0e05a830ab1714a,

title = "Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method",

abstract = "Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn 1-xMgxO (x = 0 to 0.36) thin films were prepared and TFTs with Zn1-xMgxO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn 1-xMgxO TFTs were demonstrated to have n-type enhancement behavior.",

author = "Chiang, {Shin Chuan} and Yu, {Chin Chih} and Tsay, {Chien Yie} and Chuang, {Bor Chuan} and Wang, {Min Chi} and Lin, {Chung Kwei} and Ma, {Ming Ying} and Ou, {Jiunn Yan}",

year = "2007",

language = "English",

isbn = "9789572852248",

pages = "884--887",

booktitle = "IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings",

note = "International Display Manufacturing Conference and Exhibition, IDMC 2007 ; Conference date: 03-07-2007 Through 06-07-2007",

}

TY - GEN

T1 - Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method

AU - Chiang, Shin Chuan

AU - Yu, Chin Chih

AU - Tsay, Chien Yie

AU - Chuang, Bor Chuan

AU - Wang, Min Chi

AU - Lin, Chung Kwei

AU - Ma, Ming Ying

AU - Ou, Jiunn Yan

PY - 2007

Y1 - 2007

N2 - Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn 1-xMgxO (x = 0 to 0.36) thin films were prepared and TFTs with Zn1-xMgxO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn 1-xMgxO TFTs were demonstrated to have n-type enhancement behavior.

AB - Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn 1-xMgxO (x = 0 to 0.36) thin films were prepared and TFTs with Zn1-xMgxO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn 1-xMgxO TFTs were demonstrated to have n-type enhancement behavior.

UR - http://www.scopus.com/inward/record.url?scp=56049125516&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=56049125516&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:56049125516

SN - 9789572852248

SP - 884

EP - 887

BT - IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

T2 - International Display Manufacturing Conference and Exhibition, IDMC 2007

Y2 - 3 July 2007 through 6 July 2007

ER -

Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method

摘要

其他

ASJC Scopus subject areas

其它文件與鏈接

指紋

引用此