Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn 1-xMgxO (x = 0 to 0.36) thin films were prepared and TFTs with Zn1-xMgxO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn 1-xMgxO TFTs were demonstrated to have n-type enhancement behavior.
|主出版物標題||IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings|
|出版狀態||已發佈 - 2007|
|事件||International Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, 臺灣|
持續時間: 7月 3 2007 → 7月 6 2007
|其他||International Display Manufacturing Conference and Exhibition, IDMC 2007|
|期間||7/3/07 → 7/6/07|
ASJC Scopus subject areas