摘要
In this letter, we demonstrate the key role of the Hf/Si interfacial layer (IL) in Al/Cu/IL/MoS2/TiN conductive bridge RAM. Owing to controlling Cu migration through Hf rather than Si, the Hf interface device offers consecutive >4000 DC cycles and long program/erase (P/E) endurance of gt; 2\times 10^{9}$ cycles under the low current operation of $100~\mu \text{A}$ at the fast switching speed of 100 ns. The Hf interface device shows gradual RESET, long-term potentiation/depression (LTP/LTD) pulses of 40/100 with small pulse width of 100 ns and a low power consumption of < 13 pJ is needed for artificial synapse applications.
原文 | 英語 |
---|---|
文章編號 | 9035621 |
頁(從 - 到) | 709-712 |
頁數 | 4 |
期刊 | IEEE Electron Device Letters |
卷 | 41 |
發行號 | 5 |
DOIs | |
出版狀態 | 已發佈 - 5月 2020 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 電子、光磁材料
- 電氣與電子工程