摘要
In this paper, we present a photovoltaics system with a Cu (In, Ga) (S, Se)2 (CIGS) film that can be applied in portable power devices for electronic products. The primary material of the major photovoltaics film layer is CIGS thin film. The photovoltaics system is made on an AZO/ZnO/CdS/CIGS/Mo/flexible substrate. An SEM photo of the CIGS/Mo/flexible substrate is shown in the results. All of these technologies typically use low-temperature deposition techniques. Although advances in the low-temperature deposition of CIGS cells have eliminated this performance difference, the best performance is usually from batteries deposited on a flexible substrate. The parameters of the two samples contain the total area of the deposited CIGS material and the photocurrent generated by the image. An area of 1.043 cm2 can produce a current of 0.0324 A, while an area of 225.2 cm2 can produce a current of 6.6035 A.
原文 | 英語 |
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頁(從 - 到) | 96-103 |
頁數 | 8 |
期刊 | Microelectronics Reliability |
卷 | 99 |
DOIs | |
出版狀態 | 已發佈 - 8月 1 2019 |
ASJC Scopus subject areas
- 電子、光磁材料
- 原子與分子物理與光學
- 凝聚態物理學
- 安全、風險、可靠性和品質
- 表面、塗料和薄膜
- 電氣與電子工程