This paper presents an approach that involves directly patterning multilayer graphene on a glass substrate by using ultraviolet picosecond (PS) laser irradiation. The PS laser is ultrafast, with a pulse duration of 15 ps, and can be operated at a wavelength of 355 nm. In this study, the multiple pulse ablation threshold fluence for patterning multilayer graphene was 5.2 J/cm2, with a pulse repetition rate of 200 kHz and at a fixed scanning speed of 250 mm/s. The effect of laser parameters on the width, depth, and quality of patterning was explored. To investigate laser-nonablated and laser-ablated multilayer graphene, the characteristics of graphene thin film were measured using Raman, transmittance, and electrical analyses. The experimental results revealed that the PS laser is a promising and competitive tool for ablating multiple layers to several layers of graphene thin films and even for completely removing graphene thin-film layers. The PS laser technique can be useful in developing graphene-based devices. Moreover, this approach has the potential for industrial applications.
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