A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.
|主出版物標題||INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings|
|出版狀態||已發佈 - 2010|
|事件||2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, 中国|
持續時間: 1月 3 2010 → 1月 8 2010
|其他||2010 3rd International Nanoelectronics Conference, INEC 2010|
|期間||1/3/10 → 1/8/10|
ASJC Scopus subject areas