Novel sol-gel derived SONOS-type nanocrystal memory

Chi Chang Wu; Hsin Chiang You; Fu Hsiang Ko; Wen Luh Yang

doi:10.1109/INEC.2010.5424933

Novel sol-gel derived SONOS-type nanocrystal memory

Chi Chang Wu, Hsin Chiang You, Fu Hsiang Ko, Wen Luh Yang

研究成果: 書貢獻/報告類型 › 會議貢獻

摘要

A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 10⁶ sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 10⁴ program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.

原文	英語
主出版物標題	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
頁面	1228-1229
頁數	2
DOIs	https://doi.org/10.1109/INEC.2010.5424933
出版狀態	已發佈 - 2010
對外發佈	是
事件	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, 中国持續時間: 1月 3 2010 → 1月 8 2010

其他

其他	2010 3rd International Nanoelectronics Conference, INEC 2010
國家/地區	中国
城市	Hongkong
期間	1/3/10 → 1/8/10

ASJC Scopus subject areas

電氣與電子工程

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10.1109/INEC.2010.5424933

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引用此

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title = "Novel sol-gel derived SONOS-type nanocrystal memory",

abstract = "A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.",

author = "Wu, {Chi Chang} and You, {Hsin Chiang} and Ko, {Fu Hsiang} and Yang, {Wen Luh}",

year = "2010",

doi = "10.1109/INEC.2010.5424933",

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T1 - Novel sol-gel derived SONOS-type nanocrystal memory

AU - Wu, Chi Chang

AU - You, Hsin Chiang

AU - Ko, Fu Hsiang

AU - Yang, Wen Luh

PY - 2010

Y1 - 2010

N2 - A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.

AB - A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.

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BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010

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Novel sol-gel derived SONOS-type nanocrystal memory

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