Novel IrOx/SiO2/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection

S. Jana; S. Samanta; S. Roy; J. T. Qiu; S. Maikap

doi:10.1109/VLSI-TSA.2018.8403860

Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection

S. Jana, S. Samanta, S. Roy, J. T. Qiu, S. Maikap

研究成果: 書貢獻/報告類型 › 會議貢獻

1 引文斯高帕斯（Scopus）

摘要

Novel IrO_x/SiO₂/W 10x10 μm² cross-point structure has been introduced for high-density resistive memory as well as urea/LOXL2 sensing for the first time. The Ir⁰/Ir³⁺/Ir⁴⁺ oxidation states are confirmed by X-ray photo-electron spectroscopy (XPS) analysis. A dc endurance of > 1000 cycles at low current compliance (CC) of 200 nA and long program/erase (P/E) endurance of >10¹⁰ cycles with a small pulse width of 100 ns are obtained. Super-nernstian pH sensitivity of 140 mV/pH with 99.45% linearity, and LOXL2 with a low concentration of 1 pM through porous IrO_x membrane are obtained.

原文	英語
主出版物標題	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	1-2
頁數	2
ISBN（電子）	9781538648254
DOIs	https://doi.org/10.1109/VLSI-TSA.2018.8403860
出版狀態	已發佈 - 7月 3 2018
對外發佈	是
事件	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, 臺灣持續時間: 4月 16 2018 → 4月 19 2018

出版系列

名字	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

會議

會議	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
國家/地區	臺灣
城市	Hsinchu
期間	4/16/18 → 4/19/18

ASJC Scopus subject areas

電氣與電子工程
儀器
電子、光磁材料

UN SDG

此研究成果有助於以下永續發展目標

存取文件

10.1109/VLSI-TSA.2018.8403860

其它文件與鏈接

Link to publication in Scopus

引用此

Jana, S., Samanta, S., Roy, S., Qiu, J. T., & Maikap, S. (2018). Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection. 於 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 (頁 1-2). (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2018.8403860

Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection. / Jana, S.; Samanta, S.; Roy, S. 等.
2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2 (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

研究成果: 書貢獻/報告類型 › 會議貢獻

Jana, S, Samanta, S, Roy, S, Qiu, JT & Maikap, S 2018, Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection. 於 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, Institute of Electrical and Electronics Engineers Inc., 頁 1-2, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, Hsinchu, 臺灣, 4/16/18. https://doi.org/10.1109/VLSI-TSA.2018.8403860

Jana S, Samanta S, Roy S, Qiu JT, Maikap S. Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection. 於 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-2. (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). doi: 10.1109/VLSI-TSA.2018.8403860

Jana, S. ; Samanta, S. ; Roy, S. 等. / Novel IrO_x/SiO₂/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection. 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 頁 1-2 (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

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abstract = "Novel IrOx/SiO2/W 10x10 μm2 cross-point structure has been introduced for high-density resistive memory as well as urea/LOXL2 sensing for the first time. The Ir0/Ir3+/Ir4+ oxidation states are confirmed by X-ray photo-electron spectroscopy (XPS) analysis. A dc endurance of > 1000 cycles at low current compliance (CC) of 200 nA and long program/erase (P/E) endurance of >1010 cycles with a small pulse width of 100 ns are obtained. Super-nernstian pH sensitivity of 140 mV/pH with 99.45% linearity, and LOXL2 with a low concentration of 1 pM through porous IrOx membrane are obtained.",

author = "S. Jana and S. Samanta and S. Roy and Qiu, {J. T.} and S. Maikap",

note = "Funding Information: ACKNOWLEDGEMENT This work was supported by Ministry of Science and Technology (MOST) under contract number: MOST-104-2221-E-182-075. Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 ; Conference date: 16-04-2018 Through 19-04-2018",

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