Novel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memory

Hsin Chiang You, Chi Chang Wu, Fu Hsiang Ko, Tan Fu Lei, Wen Luh Yang

研究成果: 雜誌貢獻文章同行評審

5 引文 斯高帕斯(Scopus)

摘要

The authors use a very simple sol-gel spin coating method at 900 °C and 1 min rapid thermal annealing to fabricate three different poly-Si-oxide- nitride-oxide-silicon-type flash memories. The memory windows estimated from the curve of drain current versus applied gate voltage are 3, 3.3, and 4 V for (i) Hf O2 thin film, (ii) hafnium silicate nanocrystal, and (iii) coexisted hafnium silicate and zirconium silicate nanocrystal memory, respectively. Together with the measurement from gate disturbance and drain disturbance on these fabricated devices, the coexisted nanocrystal devices exhibit better reliability than both the thin film type memory and single nanocrystal type memory.

原文英語
頁(從 - 到)2568-2571
頁數4
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
25
發行號6
DOIs
出版狀態已發佈 - 2007
對外發佈

ASJC Scopus subject areas

  • 凝聚態物理學
  • 電氣與電子工程

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