Negative voltage modulated multi-level resistive switching by using a Cr/BaTiO x/TiN structure and quantum conductance through evidence of H 2 O 2 sensing mechanism

Somsubhra Chakrabarti, Sreekanth Ginnaram, Surajit Jana, Zong Yi Wu, Kanishk Singh, Anisha Roy, Pankaj Kumar, Siddheswar Maikap, Jian Tai Qiu, Hsin Ming Cheng, Ling Na Tsai, Ya Ling Chang, Rajat Mahapatra, Jer Ren Yang

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56 引文 斯高帕斯(Scopus)

摘要

Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiOx/TiN structure have been investigated for the first time. The as-deposited amorphous BaTiOx film has been confirmed by high-resolution transmission electron microscopy. X-ray photo-electron spectroscopy shows different oxidation states of Ba in the switching material, which is responsible for tunable more than 10 resistance states by varying negative stop voltage owing to slow decay value of RESET slope (217.39 mV/decade). Quantum conductance phenomenon has been observed in staircase RESET cycle of the memory devices. By inspecting the oxidation states of Ba+ and Ba2+ through measuring H2O2 with a low concentration of 1 nM in electrolyte/BaTiOx/SiO2/p-Si structure, the switching mechanism of each HRS level as well as the multi-level phenomenon has been explained by gradual dissolution of oxygen vacancy filament. Along with negative stop voltage modulated multi-level, current compliance dependent multi-level has also been demonstrated and resistance ratio up to 2000 has been achieved even for a thin (<5 nm) switching material. By considering oxidation-reduction of the conducting filaments, the current-voltage switching curve has been simulated as well. Hence, multi-level resistive switching of Cr/BaTiOx/TiN structure implies the promising applications in high dense, multistate non-volatile memories in near future.

原文英語
文章編號4735
期刊Scientific Reports
7
發行號1
DOIs
出版狀態已發佈 - 12月 1 2017
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ASJC Scopus subject areas

  • 多學科

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