摘要
Raman spectrum of a graphene edge, showing the main raman features, the D band(∼1350 cm-1), G band(∼1580 cm-1) and 2D band (∼2700 cm-1) taken with a laser excitation energy of 2.41 eV. D band is not easy to be found in the good structure of the graphite, generally D band and G band integral intensity ratio ID/IG, to determine whether the carbon material defects and the crystallization of the pros and cons, but D band is usually also the incident light wavelength with the impact of the incident area. The insert voltage conditions with H2SO4 and KOH is demo in the study. The D band and G band integral intensity ratio ID/IG is equal 1.08, and FWHM(cm-1) is equal 97.6 value.
原文 | 英語 |
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主出版物標題 | EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits |
發行者 | Institute of Electrical and Electronics Engineers Inc. |
頁面 | 1-2 |
頁數 | 2 |
卷 | 2017-January |
ISBN(電子) | 9781538629079 |
DOIs | |
出版狀態 | 已發佈 - 12月 1 2017 |
對外發佈 | 是 |
事件 | 13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, 臺灣 持續時間: 10月 18 2017 → 10月 20 2017 |
會議
會議 | 13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 |
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國家/地區 | 臺灣 |
城市 | Hsinchu |
期間 | 10/18/17 → 10/20/17 |
ASJC Scopus subject areas
- 電子、光磁材料
- 硬體和架構
- 電氣與電子工程