Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories

Yu Ping Hsiao; Wen Luh Yang; Li Min Lin; Fun Tat Chin; Yu Hsien Lin; Ke Luen Yang; Chi Chang Wu

doi:10.1016/j.microrel.2015.08.013

Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories

Yu Ping Hsiao
, Wen Luh Yang
, Li Min Lin
, Fun Tat Chin
, Yu Hsien Lin
, Ke Luen Yang
, Chi Chang Wu

研究成果: 雜誌貢獻 › 文章 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

In this study, a polyimide (PI) thin film was synthesized as a resistive layer for creating resistive random access memory (ReRAM). The switch between high- and low-resistance states is caused by the formation and dissociation of dipole direction and Schottky barrier. The impact of imidization on memory properties was evaluated in detail by clarifying the transmission mechanism, and reliability properties including retention and endurance were improved using thermal imidization. In addition, the proposed PI-based ReRAM demonstrated superior performance levels compared with those of electrochemical-metallization-based and valence-change-based ReRAMs, including higher R_ON/R_OFF ratio (> 10⁷) and lower operation energy (< 0.16 MV/cm).

原文	英語
頁（從 - 到）	2188-2197
頁數	10
期刊	Microelectronics Reliability
卷	55
發行號	11
DOIs	https://doi.org/10.1016/j.microrel.2015.08.013
出版狀態	已發佈 - 2015

ASJC Scopus subject areas

電子、光磁材料
原子與分子物理與光學
安全、風險、可靠性和品質
凝聚態物理學
表面、塗料和薄膜
電氣與電子工程

存取文件

10.1016/j.microrel.2015.08.013

其它文件與鏈接

Link to publication in Scopus

引用此

@article{84e28a4c21964d8aba7196e51c18e2d3,

title = "Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories",

abstract = "In this study, a polyimide (PI) thin film was synthesized as a resistive layer for creating resistive random access memory (ReRAM). The switch between high- and low-resistance states is caused by the formation and dissociation of dipole direction and Schottky barrier. The impact of imidization on memory properties was evaluated in detail by clarifying the transmission mechanism, and reliability properties including retention and endurance were improved using thermal imidization. In addition, the proposed PI-based ReRAM demonstrated superior performance levels compared with those of electrochemical-metallization-based and valence-change-based ReRAMs, including higher RON/ROFF ratio (> 107) and lower operation energy (< 0.16 MV/cm).",

keywords = "Polyimide (PI), Resistive random access memory (ReRAM), Thermal imidization",

author = "Hsiao, \{Yu Ping\} and Yang, \{Wen Luh\} and Lin, \{Li Min\} and Chin, \{Fun Tat\} and Lin, \{Yu Hsien\} and Yang, \{Ke Luen\} and Wu, \{Chi Chang\}",

year = "2015",

doi = "10.1016/j.microrel.2015.08.013",

language = "English",

volume = "55",

pages = "2188--2197",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

number = "11",

}

TY - JOUR

T1 - Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories

AU - Hsiao, Yu Ping

AU - Yang, Wen Luh

AU - Lin, Li Min

AU - Chin, Fun Tat

AU - Lin, Yu Hsien

AU - Yang, Ke Luen

AU - Wu, Chi Chang

PY - 2015

Y1 - 2015

N2 - In this study, a polyimide (PI) thin film was synthesized as a resistive layer for creating resistive random access memory (ReRAM). The switch between high- and low-resistance states is caused by the formation and dissociation of dipole direction and Schottky barrier. The impact of imidization on memory properties was evaluated in detail by clarifying the transmission mechanism, and reliability properties including retention and endurance were improved using thermal imidization. In addition, the proposed PI-based ReRAM demonstrated superior performance levels compared with those of electrochemical-metallization-based and valence-change-based ReRAMs, including higher RON/ROFF ratio (> 107) and lower operation energy (< 0.16 MV/cm).

AB - In this study, a polyimide (PI) thin film was synthesized as a resistive layer for creating resistive random access memory (ReRAM). The switch between high- and low-resistance states is caused by the formation and dissociation of dipole direction and Schottky barrier. The impact of imidization on memory properties was evaluated in detail by clarifying the transmission mechanism, and reliability properties including retention and endurance were improved using thermal imidization. In addition, the proposed PI-based ReRAM demonstrated superior performance levels compared with those of electrochemical-metallization-based and valence-change-based ReRAMs, including higher RON/ROFF ratio (> 107) and lower operation energy (< 0.16 MV/cm).

KW - Polyimide (PI)

KW - Resistive random access memory (ReRAM)

KW - Thermal imidization

UR - https://www.scopus.com/pages/publications/84940121552

UR - https://www.scopus.com/pages/publications/84940121552#tab=citedBy

U2 - 10.1016/j.microrel.2015.08.013

DO - 10.1016/j.microrel.2015.08.013

M3 - Article

AN - SCOPUS:84940121552

SN - 0026-2714

VL - 55

SP - 2188

EP - 2197

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 11

ER -

Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此