TY - JOUR
T1 - Facile sol-gel preparation of nanocrystal embedded thin film material for memory device
AU - Wu, Chi Chang
AU - Tsai, Yi Jen
AU - Liu, Pin Lin
AU - Yang, Wen Luh
AU - Ko, Fu Hsiang
PY - 2013/1
Y1 - 2013/1
N2 - A promising charge trapping film with crystal embedded material is proposed for future electronic devices. Instead of conventional high-vacuum and expensive tool, this technique adopts very cheaper process of sol-gel spin-coating for fabrication of thin film material in the charge trapping flash memory (CTFM). The crystal from spinodal phase separation is observed for sol-gel thin film at 900 C annealing, and is strongly related to the thickness of the spin-coated thin film. The morphology of the crystal from the ethanol solvent system is in the isolated form, while from 2-propanol solvent is in the interconnected structure. The sol-gel-derived CTFM from ethanol exhibits the better memory performance of retention times for <5 and <10 % charge loss at applied temperature of 25 and 85 C, respectively. The ethanol system CTFM demonstrates a large memory window (~10 V) and good reliability than 2-propanol (~3 V) due to the existence of several isolated crystals in silicon dioxide film.
AB - A promising charge trapping film with crystal embedded material is proposed for future electronic devices. Instead of conventional high-vacuum and expensive tool, this technique adopts very cheaper process of sol-gel spin-coating for fabrication of thin film material in the charge trapping flash memory (CTFM). The crystal from spinodal phase separation is observed for sol-gel thin film at 900 C annealing, and is strongly related to the thickness of the spin-coated thin film. The morphology of the crystal from the ethanol solvent system is in the isolated form, while from 2-propanol solvent is in the interconnected structure. The sol-gel-derived CTFM from ethanol exhibits the better memory performance of retention times for <5 and <10 % charge loss at applied temperature of 25 and 85 C, respectively. The ethanol system CTFM demonstrates a large memory window (~10 V) and good reliability than 2-propanol (~3 V) due to the existence of several isolated crystals in silicon dioxide film.
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U2 - 10.1007/s10854-012-0773-y
DO - 10.1007/s10854-012-0773-y
M3 - Article
AN - SCOPUS:84871958328
SN - 0957-4522
VL - 24
SP - 423
EP - 430
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 1
ER -