Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon

G. S. Chen; J. J. Guo; C. K. Lin; Chen Sheng Hsu; L. C. Yang; J. S. Fang

doi:10.1116/1.1450580

Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon

G. S. Chen, J. J. Guo, C. K. Lin, Chen Sheng Hsu, L. C. Yang, J. S. Fang

研究成果: 雜誌貢獻 › 文章 › 同行評審

51 引文斯高帕斯（Scopus）

摘要

The radio-frequency sputter-deposited textured TiN thin films used as diffusion barriers between copper and silicon were evaluated. The evaluations based on differences in sheet resistance, surface morphology and phase transformation induced by annealing Si/TiN (40 nm)/Cu(200 nm) samples suggested that (111) TiN was better diffusion barrier material for copper than (100) TiN. The crystallographic packing and microstructure of the textured diffusion barrier was found to be responsible for difference in barrier effectiveness.

原文	英語
頁（從 - 到）	479-485
頁數	7
期刊	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
卷	20
發行號	2
DOIs	https://doi.org/10.1116/1.1450580
出版狀態	已發佈 - 3月 2002
對外發佈	是

ASJC Scopus subject areas

表面、塗料和薄膜
表面和介面
物理與天文學（雜項）

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AU - Yang, L. C.

AU - Fang, J. S.

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Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon

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