The radio-frequency sputter-deposited textured TiN thin films used as diffusion barriers between copper and silicon were evaluated. The evaluations based on differences in sheet resistance, surface morphology and phase transformation induced by annealing Si/TiN (40 nm)/Cu(200 nm) samples suggested that (111) TiN was better diffusion barrier material for copper than (100) TiN. The crystallographic packing and microstructure of the textured diffusion barrier was found to be responsible for difference in barrier effectiveness.
|頁（從 - 到）||479-485|
|期刊||Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films|
|出版狀態||已發佈 - 3月 2002|
ASJC Scopus subject areas