Estimating the detection stability of a Si nanowire sensor using an additional charging electrode

Min Cheng Chen, Hsiao Chien Chen, Ta Hsien Lee, Yu Hsien Lin, Jyun Hung Shih, Bo Wei Wang, Yun Fang Hou, Yi Ju Chen, Chia Yi Lin, Chang Hsien Lin, Yi Ping Hsieh, Chia Hua Ho, Mu Yi Hua, Jian Tai Qiu, Tahui Wang, Fu Liang Yang

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

摘要

This paper proposes a sensing stability estimation method that involves using an additional forcing electrode to simulate the surface charge coupling effect for bottom gate nanowire sensors. The alteration of the Si nanowire can be observed by using the charging electrode without any complex surface treatment and micro-channel setup. The nanowire sensor has a distinct charge-sensitive slope (Vth shift > 60 mV/10-16C) with a wire-width scaling of 35 nm. The proposed estimation technique simplifies the charge sensing operation.

原文英語
主出版物標題2013 IEEE International Reliability Physics Symposium, IRPS 2013
頁面ME.1.1-ME.1.4
DOIs
出版狀態已發佈 - 2013
對外發佈
事件2013 IEEE International Reliability Physics Symposium, IRPS 2013 - Monterey, CA, 美國
持續時間: 4月 14 20134月 18 2013

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
ISSN(列印)1541-7026

會議

會議2013 IEEE International Reliability Physics Symposium, IRPS 2013
國家/地區美國
城市Monterey, CA
期間4/14/134/18/13

ASJC Scopus subject areas

  • 一般工程

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