摘要
Using 4-level pulse amplitude modulation (PAM-4) technique, the transmission data bit rate of the system or circuit can be doubled at the same bandwidth, compared to non-return zero (NRZ) binary modulation. In this paper, a PAM-4 vertical cavity surface emitting laser (VCSEL) diode driver circuit was designed in 90 nm CMOS technology. Through our circuit, two 10-Gb/s non-return zero (NRZ) input signals can be combined as a 20-Gb/s (10-GBaud/s) PAM-4 output current signal to drive a VCSEL diode. In our laser diode driver (LDD) circuit, the total modulation current is about 6.2mA, the power consumption is 34.1mW, and the chip size is 0.5×0.62 mm2. The VCSEL driver can be suitable to use in the transmitter module of short range optical fiber communications.
原文 | 英語 |
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主出版物標題 | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 |
發行者 | Institute of Electrical and Electronics Engineers Inc. |
頁面 | 195-198 |
頁數 | 4 |
ISBN(電子) | 9781509018307 |
DOIs | |
出版狀態 | 已發佈 - 12月 15 2016 |
對外發佈 | 是 |
事件 | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, 香港 持續時間: 8月 3 2016 → 8月 5 2016 |
會議
會議 | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 |
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國家/地區 | 香港 |
城市 | Hong Kong |
期間 | 8/3/16 → 8/5/16 |
ASJC Scopus subject areas
- 電氣與電子工程
- 硬體和架構