Design of 20-Gb/s four-level pulse amplitude modulation VCSEL driver in 90-nm CMOS technology

Jhe Yue Li; Jau Ji Jou; Tien Tsorng Shih; Chien Liang Chiu; Jian Chiun Liou; Hsin Wen Ting

doi:10.1109/EDSSC.2016.7785242

Design of 20-Gb/s four-level pulse amplitude modulation VCSEL driver in 90-nm CMOS technology

Jhe Yue Li, Jau Ji Jou, Tien Tsorng Shih, Chien Liang Chiu, Jian Chiun Liou, Hsin Wen Ting

研究成果: 書貢獻/報告類型 › 會議貢獻

5 引文斯高帕斯（Scopus）

摘要

Using 4-level pulse amplitude modulation (PAM-4) technique, the transmission data bit rate of the system or circuit can be doubled at the same bandwidth, compared to non-return zero (NRZ) binary modulation. In this paper, a PAM-4 vertical cavity surface emitting laser (VCSEL) diode driver circuit was designed in 90 nm CMOS technology. Through our circuit, two 10-Gb/s non-return zero (NRZ) input signals can be combined as a 20-Gb/s (10-GBaud/s) PAM-4 output current signal to drive a VCSEL diode. In our laser diode driver (LDD) circuit, the total modulation current is about 6.2mA, the power consumption is 34.1mW, and the chip size is 0.5×0.62 mm2. The VCSEL driver can be suitable to use in the transmitter module of short range optical fiber communications.

原文	英語
主出版物標題	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	195-198
頁數	4
ISBN（電子）	9781509018307
DOIs	https://doi.org/10.1109/EDSSC.2016.7785242
出版狀態	已發佈 - 12月 15 2016
對外發佈	是
事件	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, 香港持續時間: 8月 3 2016 → 8月 5 2016

會議

會議	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
國家/地區	香港
城市	Hong Kong
期間	8/3/16 → 8/5/16

ASJC Scopus subject areas

電氣與電子工程
硬體和架構

存取文件

10.1109/EDSSC.2016.7785242

其它文件與鏈接

Link to publication in Scopus

引用此

Li, J. Y., Jou, J. J., Shih, T. T., Chiu, C. L., Liou, J. C., & Ting, H. W. (2016). Design of 20-Gb/s four-level pulse amplitude modulation VCSEL driver in 90-nm CMOS technology. 於 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 (頁 195-198). 文章 7785242 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2016.7785242

Design of 20-Gb/s four-level pulse amplitude modulation VCSEL driver in 90-nm CMOS technology. / Li, Jhe Yue; Jou, Jau Ji; Shih, Tien Tsorng 等.
2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 195-198 7785242.

研究成果: 書貢獻/報告類型 › 會議貢獻

Li, JY, Jou, JJ, Shih, TT, Chiu, CL, Liou, JC & Ting, HW 2016, Design of 20-Gb/s four-level pulse amplitude modulation VCSEL driver in 90-nm CMOS technology. 於 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016., 7785242, Institute of Electrical and Electronics Engineers Inc., 頁 195-198, 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, Hong Kong, 香港, 8/3/16. https://doi.org/10.1109/EDSSC.2016.7785242

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title = "Design of 20-Gb/s four-level pulse amplitude modulation VCSEL driver in 90-nm CMOS technology",

abstract = "Using 4-level pulse amplitude modulation (PAM-4) technique, the transmission data bit rate of the system or circuit can be doubled at the same bandwidth, compared to non-return zero (NRZ) binary modulation. In this paper, a PAM-4 vertical cavity surface emitting laser (VCSEL) diode driver circuit was designed in 90 nm CMOS technology. Through our circuit, two 10-Gb/s non-return zero (NRZ) input signals can be combined as a 20-Gb/s (10-GBaud/s) PAM-4 output current signal to drive a VCSEL diode. In our laser diode driver (LDD) circuit, the total modulation current is about 6.2mA, the power consumption is 34.1mW, and the chip size is 0.5×0.62 mm2. The VCSEL driver can be suitable to use in the transmitter module of short range optical fiber communications.",

keywords = "4-level pulse amplitude modulation (PAM-4), laser diode driver (LDD), vertical cavity surface emitting laser (VCSEL)",

author = "Li, {Jhe Yue} and Jou, {Jau Ji} and Shih, {Tien Tsorng} and Chiu, {Chien Liang} and Liou, {Jian Chiun} and Ting, {Hsin Wen}",

year = "2016",

month = dec,

day = "15",

doi = "10.1109/EDSSC.2016.7785242",

language = "English",

pages = "195--198",

booktitle = "2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 ; Conference date: 03-08-2016 Through 05-08-2016",

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AU - Li, Jhe Yue

AU - Jou, Jau Ji

AU - Shih, Tien Tsorng

AU - Chiu, Chien Liang

AU - Liou, Jian Chiun

AU - Ting, Hsin Wen

PY - 2016/12/15

Y1 - 2016/12/15

N2 - Using 4-level pulse amplitude modulation (PAM-4) technique, the transmission data bit rate of the system or circuit can be doubled at the same bandwidth, compared to non-return zero (NRZ) binary modulation. In this paper, a PAM-4 vertical cavity surface emitting laser (VCSEL) diode driver circuit was designed in 90 nm CMOS technology. Through our circuit, two 10-Gb/s non-return zero (NRZ) input signals can be combined as a 20-Gb/s (10-GBaud/s) PAM-4 output current signal to drive a VCSEL diode. In our laser diode driver (LDD) circuit, the total modulation current is about 6.2mA, the power consumption is 34.1mW, and the chip size is 0.5×0.62 mm2. The VCSEL driver can be suitable to use in the transmitter module of short range optical fiber communications.

AB - Using 4-level pulse amplitude modulation (PAM-4) technique, the transmission data bit rate of the system or circuit can be doubled at the same bandwidth, compared to non-return zero (NRZ) binary modulation. In this paper, a PAM-4 vertical cavity surface emitting laser (VCSEL) diode driver circuit was designed in 90 nm CMOS technology. Through our circuit, two 10-Gb/s non-return zero (NRZ) input signals can be combined as a 20-Gb/s (10-GBaud/s) PAM-4 output current signal to drive a VCSEL diode. In our laser diode driver (LDD) circuit, the total modulation current is about 6.2mA, the power consumption is 34.1mW, and the chip size is 0.5×0.62 mm2. The VCSEL driver can be suitable to use in the transmitter module of short range optical fiber communications.

KW - 4-level pulse amplitude modulation (PAM-4)

KW - laser diode driver (LDD)

KW - vertical cavity surface emitting laser (VCSEL)

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BT - 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016

Y2 - 3 August 2016 through 5 August 2016

ER -

Design of 20-Gb/s four-level pulse amplitude modulation VCSEL driver in 90-nm CMOS technology

摘要

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