TY - GEN
T1 - Design of 20-Gb/s four-level pulse amplitude modulation VCSEL driver in 90-nm CMOS technology
AU - Li, Jhe Yue
AU - Jou, Jau Ji
AU - Shih, Tien Tsorng
AU - Chiu, Chien Liang
AU - Liou, Jian Chiun
AU - Ting, Hsin Wen
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/12/15
Y1 - 2016/12/15
N2 - Using 4-level pulse amplitude modulation (PAM-4) technique, the transmission data bit rate of the system or circuit can be doubled at the same bandwidth, compared to non-return zero (NRZ) binary modulation. In this paper, a PAM-4 vertical cavity surface emitting laser (VCSEL) diode driver circuit was designed in 90 nm CMOS technology. Through our circuit, two 10-Gb/s non-return zero (NRZ) input signals can be combined as a 20-Gb/s (10-GBaud/s) PAM-4 output current signal to drive a VCSEL diode. In our laser diode driver (LDD) circuit, the total modulation current is about 6.2mA, the power consumption is 34.1mW, and the chip size is 0.5×0.62 mm2. The VCSEL driver can be suitable to use in the transmitter module of short range optical fiber communications.
AB - Using 4-level pulse amplitude modulation (PAM-4) technique, the transmission data bit rate of the system or circuit can be doubled at the same bandwidth, compared to non-return zero (NRZ) binary modulation. In this paper, a PAM-4 vertical cavity surface emitting laser (VCSEL) diode driver circuit was designed in 90 nm CMOS technology. Through our circuit, two 10-Gb/s non-return zero (NRZ) input signals can be combined as a 20-Gb/s (10-GBaud/s) PAM-4 output current signal to drive a VCSEL diode. In our laser diode driver (LDD) circuit, the total modulation current is about 6.2mA, the power consumption is 34.1mW, and the chip size is 0.5×0.62 mm2. The VCSEL driver can be suitable to use in the transmitter module of short range optical fiber communications.
KW - 4-level pulse amplitude modulation (PAM-4)
KW - laser diode driver (LDD)
KW - vertical cavity surface emitting laser (VCSEL)
UR - http://www.scopus.com/inward/record.url?scp=85010622291&partnerID=8YFLogxK
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U2 - 10.1109/EDSSC.2016.7785242
DO - 10.1109/EDSSC.2016.7785242
M3 - Conference contribution
AN - SCOPUS:85010622291
T3 - 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
SP - 195
EP - 198
BT - 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Y2 - 3 August 2016 through 5 August 2016
ER -