CMOS-based tactile sensors using oxide as sacrificial layer

Y. C. Lin; C. J. Hsieh; C. T. Sun; J. C. Liou; W. C. Tian

doi:10.1109/Transducers.2013.6627162

CMOS-based tactile sensors using oxide as sacrificial layer

Y. C. Lin, C. J. Hsieh, C. T. Sun, J. C. Liou, W. C. Tian

研究成果: 書貢獻/報告類型 › 會議貢獻

1 引文斯高帕斯（Scopus）

摘要

In this work, CMOS-based tactile sensors using oxide as the sacrificial layer was demonstrated. The multiple metal layers and dielectric layers in the backend of CMOS processes were used to fabricate the moveable membrane of capacitive-based tactile sensors. The sensor was fabricated by the commercial 0.35 μm CMOS process and our self-developed post CMOS oxide etching. Three different via designs were proposed to adjust mechanical strength of the membrane electrode. A multivibrator circuit was utilized to decrease the parasitic effect of the capacitive sensors. The tactile sensors with point-type vias showed the best sensitivity of 2.65 Hz/mmHg with the dynamic range 0-388 mmHg.

原文	英語
主出版物標題	2013 Transducers and Eurosensors XXVII
主出版物子標題	The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013
頁面	1895-1898
頁數	4
DOIs	https://doi.org/10.1109/Transducers.2013.6627162
出版狀態	已發佈 - 2013
對外發佈	是
事件	2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013 - Barcelona, 西班牙持續時間: 6月 16 2013 → 6月 20 2013

會議

會議	2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013
國家/地區	西班牙
城市	Barcelona
期間	6/16/13 → 6/20/13

ASJC Scopus subject areas

硬體和架構
電氣與電子工程

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10.1109/Transducers.2013.6627162

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Lin, Y. C., Hsieh, C. J., Sun, C. T., Liou, J. C., & Tian, W. C. (2013). CMOS-based tactile sensors using oxide as sacrificial layer. 於 2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013 (頁 1895-1898). Article 6627162 https://doi.org/10.1109/Transducers.2013.6627162

Lin, YC, Hsieh, CJ, Sun, CT, Liou, JC & Tian, WC 2013, CMOS-based tactile sensors using oxide as sacrificial layer. 於 2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013., 6627162, 頁 1895-1898, 2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013, Barcelona, 西班牙, 6/16/13. https://doi.org/10.1109/Transducers.2013.6627162

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abstract = "In this work, CMOS-based tactile sensors using oxide as the sacrificial layer was demonstrated. The multiple metal layers and dielectric layers in the backend of CMOS processes were used to fabricate the moveable membrane of capacitive-based tactile sensors. The sensor was fabricated by the commercial 0.35 μm CMOS process and our self-developed post CMOS oxide etching. Three different via designs were proposed to adjust mechanical strength of the membrane electrode. A multivibrator circuit was utilized to decrease the parasitic effect of the capacitive sensors. The tactile sensors with point-type vias showed the best sensitivity of 2.65 Hz/mmHg with the dynamic range 0-388 mmHg.",

keywords = "CMOS MEMS, multivibrator circuit, oxide etching, pressure sensor, tactile sensor",

author = "Lin, {Y. C.} and Hsieh, {C. J.} and Sun, {C. T.} and Liou, {J. C.} and Tian, {W. C.}",

year = "2013",

doi = "10.1109/Transducers.2013.6627162",

language = "English",

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AU - Sun, C. T.

AU - Liou, J. C.

AU - Tian, W. C.

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N2 - In this work, CMOS-based tactile sensors using oxide as the sacrificial layer was demonstrated. The multiple metal layers and dielectric layers in the backend of CMOS processes were used to fabricate the moveable membrane of capacitive-based tactile sensors. The sensor was fabricated by the commercial 0.35 μm CMOS process and our self-developed post CMOS oxide etching. Three different via designs were proposed to adjust mechanical strength of the membrane electrode. A multivibrator circuit was utilized to decrease the parasitic effect of the capacitive sensors. The tactile sensors with point-type vias showed the best sensitivity of 2.65 Hz/mmHg with the dynamic range 0-388 mmHg.

AB - In this work, CMOS-based tactile sensors using oxide as the sacrificial layer was demonstrated. The multiple metal layers and dielectric layers in the backend of CMOS processes were used to fabricate the moveable membrane of capacitive-based tactile sensors. The sensor was fabricated by the commercial 0.35 μm CMOS process and our self-developed post CMOS oxide etching. Three different via designs were proposed to adjust mechanical strength of the membrane electrode. A multivibrator circuit was utilized to decrease the parasitic effect of the capacitive sensors. The tactile sensors with point-type vias showed the best sensitivity of 2.65 Hz/mmHg with the dynamic range 0-388 mmHg.

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KW - multivibrator circuit

KW - oxide etching

KW - pressure sensor

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CMOS-based tactile sensors using oxide as sacrificial layer

摘要

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ASJC Scopus subject areas

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