CMOS-based tactile sensors using oxide as sacrificial layer

Y. C. Lin, C. J. Hsieh, C. T. Sun, J. C. Liou, W. C. Tian

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

摘要

In this work, CMOS-based tactile sensors using oxide as the sacrificial layer was demonstrated. The multiple metal layers and dielectric layers in the backend of CMOS processes were used to fabricate the moveable membrane of capacitive-based tactile sensors. The sensor was fabricated by the commercial 0.35 μm CMOS process and our self-developed post CMOS oxide etching. Three different via designs were proposed to adjust mechanical strength of the membrane electrode. A multivibrator circuit was utilized to decrease the parasitic effect of the capacitive sensors. The tactile sensors with point-type vias showed the best sensitivity of 2.65 Hz/mmHg with the dynamic range 0-388 mmHg.
原文英語
主出版物標題2013 Transducers and Eurosensors XXVII
主出版物子標題The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013
頁面1895-1898
頁數4
DOIs
出版狀態已發佈 - 2013
對外發佈
事件2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013 - Barcelona, 西班牙
持續時間: 6月 16 20136月 20 2013

會議

會議2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013
國家/地區西班牙
城市Barcelona
期間6/16/136/20/13

ASJC Scopus subject areas

  • 硬體和架構
  • 電氣與電子工程

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