Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n+-p junction diodes

Wen Luh Yang, Wen Fa Wu, Don Gey Liu, Chi Chang Wu, Keng Liang Ou

研究成果: 雜誌貢獻文章同行評審

69 引文 斯高帕斯(Scopus)

摘要

This paper investigates the barrier capability of tantalum nitride (TaNx) layers against Cu diffusion. The TaNx layers were reactively sputtered in contact holes to a thickness of 50 nm by using a different nitrogen flow rate. Results indicate that the TaNx layers fail to be a diffusion barrier due to a relative high resistivity for nitrogen flow ratios exceeding 10%. In addition, we found that the phase of α-Ta(-N) functions as an effective barrier against Cu diffusion and that Cu/TaN(3-5%)/n+-p junction diodes are able to sustain a 30 min furnace anneal up to 500 °C without causing degradation of the electrical characteristics. The high-temperature failure of barrier capability for the TaNx layers is due to interdiffusion of Cu and Si across the TaNx film structure to form Cu3Si. The surface roughness and the film structure of TaNx layers determine the ability of Cu and Si interdiffusion.

原文英語
頁(從 - 到)149-158
頁數10
期刊Solid-State Electronics
45
發行號1
DOIs
出版狀態已發佈 - 1月 1 2001
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 材料化學
  • 電氣與電子工程

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