A GaAs non-volatile memory

D. L. Harrington; W. C. Gee; J. F. Fay; I. S. Leybovich; I. K. Naik; T. P. Nicalek; B. P. Maderic; L. E. Sanchez; M. W. Stoddard; G. L. Troeger; S. H. Watanabe; S. Y. Wu; J. K. Notthoff

A GaAs non-volatile memory

D. L. Harrington, W. C. Gee, J. F. Fay, I. S. Leybovich, I. K. Naik, T. P. Nicalek, B. P. Maderic, L. E. Sanchez, M. W. Stoddard, G. L. Troeger, S. H. Watanabe, S. Y. Wu, J. K. Notthoff

研究成果: 書貢獻/報告類型 › 會議貢獻

摘要

A GaAs non-volatile memory that retains data without power by using a ferroelectric capacitor memory storage element has been developed. A complete 2K/4K bit ferroelectric random access memory (FERRAM) and two test modules have been fabricated. Initial results on the test modules and the FERRAM have demonstrated the feasibility of this approach. This is believed to be the first demonstration of a non-volatile memory circuit using GaAs technology.

原文	英語
主出版物標題	Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
發行者	Publ by IEEE
頁面	75-78
頁數	4
ISBN（列印）	078030196X
出版狀態	已發佈 - 1月 1 1992
事件	13th Annual GaAs IC Symposium Technical Digest - Monterey, CA, USA 持續時間: 10月 20 1991 → 10月 23 1991

會議

會議	13th Annual GaAs IC Symposium Technical Digest
城市	Monterey, CA, USA
期間	10/20/91 → 10/23/91

ASJC Scopus subject areas

電氣與電子工程

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Harrington, DL, Gee, WC, Fay, JF, Leybovich, IS, Naik, IK, Nicalek, TP, Maderic, BP, Sanchez, LE, Stoddard, MW, Troeger, GL, Watanabe, SH, Wu, SY & Notthoff, JK 1992, A GaAs non-volatile memory. 於 Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE, 頁 75-78, 13th Annual GaAs IC Symposium Technical Digest, Monterey, CA, USA, 10/20/91.

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title = "A GaAs non-volatile memory",

abstract = "A GaAs non-volatile memory that retains data without power by using a ferroelectric capacitor memory storage element has been developed. A complete 2K/4K bit ferroelectric random access memory (FERRAM) and two test modules have been fabricated. Initial results on the test modules and the FERRAM have demonstrated the feasibility of this approach. This is believed to be the first demonstration of a non-volatile memory circuit using GaAs technology.",

author = "Harrington, {D. L.} and Gee, {W. C.} and Fay, {J. F.} and Leybovich, {I. S.} and Naik, {I. K.} and Nicalek, {T. P.} and Maderic, {B. P.} and Sanchez, {L. E.} and Stoddard, {M. W.} and Troeger, {G. L.} and Watanabe, {S. H.} and Wu, {S. Y.} and Notthoff, {J. K.}",

year = "1992",

month = jan,

day = "1",

language = "English",

isbn = "078030196X",

pages = "75--78",

booktitle = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",

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T1 - A GaAs non-volatile memory

AU - Harrington, D. L.

AU - Gee, W. C.

AU - Fay, J. F.

AU - Leybovich, I. S.

AU - Naik, I. K.

AU - Nicalek, T. P.

AU - Maderic, B. P.

AU - Sanchez, L. E.

AU - Stoddard, M. W.

AU - Troeger, G. L.

AU - Watanabe, S. H.

AU - Wu, S. Y.

AU - Notthoff, J. K.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - A GaAs non-volatile memory that retains data without power by using a ferroelectric capacitor memory storage element has been developed. A complete 2K/4K bit ferroelectric random access memory (FERRAM) and two test modules have been fabricated. Initial results on the test modules and the FERRAM have demonstrated the feasibility of this approach. This is believed to be the first demonstration of a non-volatile memory circuit using GaAs technology.

AB - A GaAs non-volatile memory that retains data without power by using a ferroelectric capacitor memory storage element has been developed. A complete 2K/4K bit ferroelectric random access memory (FERRAM) and two test modules have been fabricated. Initial results on the test modules and the FERRAM have demonstrated the feasibility of this approach. This is believed to be the first demonstration of a non-volatile memory circuit using GaAs technology.

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M3 - Conference contribution

AN - SCOPUS:0026712652

SN - 078030196X

SP - 75

EP - 78

BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

PB - Publ by IEEE

T2 - 13th Annual GaAs IC Symposium Technical Digest

Y2 - 20 October 1991 through 23 October 1991

ER -

A GaAs non-volatile memory

摘要

會議

ASJC Scopus subject areas

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