摘要
A GaAs non-volatile memory that retains data without power by using a ferroelectric capacitor memory storage element has been developed. A complete 2K/4K bit ferroelectric random access memory (FERRAM) and two test modules have been fabricated. Initial results on the test modules and the FERRAM have demonstrated the feasibility of this approach. This is believed to be the first demonstration of a non-volatile memory circuit using GaAs technology.
原文 | 英語 |
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主出版物標題 | Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) |
發行者 | Publ by IEEE |
頁面 | 75-78 |
頁數 | 4 |
ISBN(列印) | 078030196X |
出版狀態 | 已發佈 - 1月 1 1992 |
事件 | 13th Annual GaAs IC Symposium Technical Digest - Monterey, CA, USA 持續時間: 10月 20 1991 → 10月 23 1991 |
會議
會議 | 13th Annual GaAs IC Symposium Technical Digest |
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城市 | Monterey, CA, USA |
期間 | 10/20/91 → 10/23/91 |
ASJC Scopus subject areas
- 電氣與電子工程