@inproceedings{e943763c690748baa578f4550705ef2a,
title = "A GaAs non-volatile memory",
abstract = "A GaAs non-volatile memory that retains data without power by using a ferroelectric capacitor memory storage element has been developed. A complete 2K/4K bit ferroelectric random access memory (FERRAM) and two test modules have been fabricated. Initial results on the test modules and the FERRAM have demonstrated the feasibility of this approach. This is believed to be the first demonstration of a non-volatile memory circuit using GaAs technology.",
author = "Harrington, {D. L.} and Gee, {W. C.} and Fay, {J. F.} and Leybovich, {I. S.} and Naik, {I. K.} and Nicalek, {T. P.} and Maderic, {B. P.} and Sanchez, {L. E.} and Stoddard, {M. W.} and Troeger, {G. L.} and Watanabe, {S. H.} and Wu, {S. Y.} and Notthoff, {J. K.}",
year = "1992",
month = jan,
day = "1",
language = "English",
isbn = "078030196X",
series = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",
publisher = "Publ by IEEE",
pages = "75--78",
booktitle = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",
note = "13th Annual GaAs IC Symposium Technical Digest ; Conference date: 20-10-1991 Through 23-10-1991",
}