Well aligned ultrasharp nanotip arrays for high-efficiency field emission

Chi-Chang Wu; Keng-Liang Ou; Chung Huan Shieh

doi:10.1109/INEC.2011.5991758

Well aligned ultrasharp nanotip arrays for high-efficiency field emission

Chi-Chang Wu, Keng-Liang Ou, Chung Huan Shieh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have fabricated a large area and well aligned ultrasharp nanotip arrays by using photolithography and reactive ion etching techniques. The apex of the tip can be as sharp as about 3 nm in radius. The mechanism of nanotip formation is that the remained photoresist on top of the tip is gradually reduced with increasing the etching time, and hence sidewall of the tip is pared to form a pointier nanotip. At the end, the photoresist is fully etched away and a pyramid-like shape is formed at the tip-end due to the etch probability of incident ion on the sidewall. The field emission property of the ultrasharp nanotip is measured, and the turn-on field is about 20 MV-cm.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991758
Publication status	Published - 2011
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: Jun 21 2011 → Jun 24 2011

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Other

Other	4th IEEE International Nanoelectronics Conference, INEC 2011
Country/Territory	Taiwan
City	Tao-Yuan
Period	6/21/11 → 6/24/11

Keywords

field emission
nanotip
tip arrays
well-aligned

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/INEC.2011.5991758

Cite this

Wu, C-C, Ou, K-L & Shieh, CH 2011, Well aligned ultrasharp nanotip arrays for high-efficiency field emission. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991758, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 6/21/11. https://doi.org/10.1109/INEC.2011.5991758

@inproceedings{fa3e3f8367ef4216b69200db1b5240df,

title = "Well aligned ultrasharp nanotip arrays for high-efficiency field emission",

abstract = "We have fabricated a large area and well aligned ultrasharp nanotip arrays by using photolithography and reactive ion etching techniques. The apex of the tip can be as sharp as about 3 nm in radius. The mechanism of nanotip formation is that the remained photoresist on top of the tip is gradually reduced with increasing the etching time, and hence sidewall of the tip is pared to form a pointier nanotip. At the end, the photoresist is fully etched away and a pyramid-like shape is formed at the tip-end due to the etch probability of incident ion on the sidewall. The field emission property of the ultrasharp nanotip is measured, and the turn-on field is about 20 MV-cm.",

keywords = "field emission, nanotip, tip arrays, well-aligned",

author = "Chi-Chang Wu and Keng-Liang Ou and Shieh, {Chung Huan}",

year = "2011",

doi = "10.1109/INEC.2011.5991758",

language = "English",

isbn = "9781457703799",

series = "Proceedings - International NanoElectronics Conference, INEC",

booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",

note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",

}

TY - GEN

T1 - Well aligned ultrasharp nanotip arrays for high-efficiency field emission

AU - Wu, Chi-Chang

AU - Ou, Keng-Liang

AU - Shieh, Chung Huan

PY - 2011

Y1 - 2011

N2 - We have fabricated a large area and well aligned ultrasharp nanotip arrays by using photolithography and reactive ion etching techniques. The apex of the tip can be as sharp as about 3 nm in radius. The mechanism of nanotip formation is that the remained photoresist on top of the tip is gradually reduced with increasing the etching time, and hence sidewall of the tip is pared to form a pointier nanotip. At the end, the photoresist is fully etched away and a pyramid-like shape is formed at the tip-end due to the etch probability of incident ion on the sidewall. The field emission property of the ultrasharp nanotip is measured, and the turn-on field is about 20 MV-cm.

AB - We have fabricated a large area and well aligned ultrasharp nanotip arrays by using photolithography and reactive ion etching techniques. The apex of the tip can be as sharp as about 3 nm in radius. The mechanism of nanotip formation is that the remained photoresist on top of the tip is gradually reduced with increasing the etching time, and hence sidewall of the tip is pared to form a pointier nanotip. At the end, the photoresist is fully etched away and a pyramid-like shape is formed at the tip-end due to the etch probability of incident ion on the sidewall. The field emission property of the ultrasharp nanotip is measured, and the turn-on field is about 20 MV-cm.

KW - field emission

KW - nanotip

KW - tip arrays

KW - well-aligned

UR - http://www.scopus.com/inward/record.url?scp=80053018238&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053018238&partnerID=8YFLogxK

U2 - 10.1109/INEC.2011.5991758

DO - 10.1109/INEC.2011.5991758

M3 - Conference contribution

AN - SCOPUS:80053018238

SN - 9781457703799

T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011

Y2 - 21 June 2011 through 24 June 2011

ER -

Well aligned ultrasharp nanotip arrays for high-efficiency field emission

Abstract

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Keywords

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