Abstract
(Figure Presented). A novel organic/graphene/inorganic heterostructure, consisting of a graphene layer encapsulated by n- and p- type photoactive materials with complementary absorptions, enables the control of dual n- and p- typed transport behaviors of a graphene transistor under selective UV or visible light illumination. A graphenebased p-n junction created by spatially patterned wavelength-selective illumination using the organic/graphene/inorganic heterostructure is also demonstrated.
Original language | English |
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Pages (from-to) | 282-287 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 27 |
Issue number | 2 |
DOIs | |
Publication status | Published - Jan 14 2015 |
Externally published | Yes |
Keywords
- Dual-type doping
- Graphene
- Graphene heterostructure
- p-n junction
- Wavelength-selective
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering