Abstract
This report demonstrated that the open-circuit voltage (VOC) of organic photovoltaic devices could be altered by changing the deposition rate of donor. The VOC was higher when used a higher deposition rate of donor. Atomic force microscopic image of donor thin film showing the presence of pinholes indicated the strong molecular interaction at the lower deposition rate. These may cause a severe leakage current from acceptor to anode as observed in the dark current. Equivalent circuit model and temperature-dependent dark currents were utilized to realize the effect of reverse saturation current on VOC. The higher barrier height at the donor-acceptor interface was attributed to the improved VOC for the device with higher donor deposition rate.
Original language | English |
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Title of host publication | Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices |
Subtitle of host publication | TFT Technologies and FPD Materials |
Publisher | IEEE Computer Society |
Pages | 213-216 |
Number of pages | 4 |
ISBN (Print) | 9784863483958 |
DOIs | |
Publication status | Published - Jan 1 2014 |
Externally published | Yes |
Event | 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 - Kyoto, Japan Duration: Jul 2 2014 → Jul 4 2014 |
Conference
Conference | 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 |
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Country/Territory | Japan |
City | Kyoto |
Period | 7/2/14 → 7/4/14 |
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering