Understanding the open-circuit voltage of organic photovoltaic devices with donor deposited at different deposition rate

Wei Cheng Su; Chih Chien Lee; Bo Yao Huang; Wen Chang Chang

doi:10.1109/AM-FPD.2014.6867174

Understanding the open-circuit voltage of organic photovoltaic devices with donor deposited at different deposition rate

Wei Cheng Su, Chih Chien Lee, Bo Yao Huang, Wen Chang Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This report demonstrated that the open-circuit voltage (V_OC) of organic photovoltaic devices could be altered by changing the deposition rate of donor. The V_OC was higher when used a higher deposition rate of donor. Atomic force microscopic image of donor thin film showing the presence of pinholes indicated the strong molecular interaction at the lower deposition rate. These may cause a severe leakage current from acceptor to anode as observed in the dark current. Equivalent circuit model and temperature-dependent dark currents were utilized to realize the effect of reverse saturation current on V_OC. The higher barrier height at the donor-acceptor interface was attributed to the improved V_OC for the device with higher donor deposition rate.

Original language	English
Title of host publication	Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials
Publisher	IEEE Computer Society
Pages	213-216
Number of pages	4
ISBN (Print)	9784863483958
DOIs	https://doi.org/10.1109/AM-FPD.2014.6867174
Publication status	Published - Jan 1 2014
Externally published	Yes
Event	21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 - Kyoto, Japan Duration: Jul 2 2014 → Jul 4 2014

Publication series

Name	Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Conference

Conference	21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014
Country/Territory	Japan
City	Kyoto
Period	7/2/14 → 7/4/14

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/AM-FPD.2014.6867174

Cite this

Su, W. C., Lee, C. C., Huang, B. Y., & Chang, W. C. (2014). Understanding the open-circuit voltage of organic photovoltaic devices with donor deposited at different deposition rate. In Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 213-216). Article 6867174 (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). IEEE Computer Society. https://doi.org/10.1109/AM-FPD.2014.6867174

Understanding the open-circuit voltage of organic photovoltaic devices with donor deposited at different deposition rate. / Su, Wei Cheng; Lee, Chih Chien; Huang, Bo Yao et al.
Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society, 2014. p. 213-216 6867174 (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Su, WC, Lee, CC, Huang, BY & Chang, WC 2014, Understanding the open-circuit voltage of organic photovoltaic devices with donor deposited at different deposition rate. in Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 6867174, Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, IEEE Computer Society, pp. 213-216, 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014, Kyoto, Japan, 7/2/14. https://doi.org/10.1109/AM-FPD.2014.6867174

Su WC, Lee CC, Huang BY, Chang WC. Understanding the open-circuit voltage of organic photovoltaic devices with donor deposited at different deposition rate. In Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society. 2014. p. 213-216. 6867174. (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). doi: 10.1109/AM-FPD.2014.6867174

Su, Wei Cheng ; Lee, Chih Chien ; Huang, Bo Yao et al. / Understanding the open-circuit voltage of organic photovoltaic devices with donor deposited at different deposition rate. Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society, 2014. pp. 213-216 (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

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abstract = "This report demonstrated that the open-circuit voltage (VOC) of organic photovoltaic devices could be altered by changing the deposition rate of donor. The VOC was higher when used a higher deposition rate of donor. Atomic force microscopic image of donor thin film showing the presence of pinholes indicated the strong molecular interaction at the lower deposition rate. These may cause a severe leakage current from acceptor to anode as observed in the dark current. Equivalent circuit model and temperature-dependent dark currents were utilized to realize the effect of reverse saturation current on VOC. The higher barrier height at the donor-acceptor interface was attributed to the improved VOC for the device with higher donor deposition rate.",

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N2 - This report demonstrated that the open-circuit voltage (VOC) of organic photovoltaic devices could be altered by changing the deposition rate of donor. The VOC was higher when used a higher deposition rate of donor. Atomic force microscopic image of donor thin film showing the presence of pinholes indicated the strong molecular interaction at the lower deposition rate. These may cause a severe leakage current from acceptor to anode as observed in the dark current. Equivalent circuit model and temperature-dependent dark currents were utilized to realize the effect of reverse saturation current on VOC. The higher barrier height at the donor-acceptor interface was attributed to the improved VOC for the device with higher donor deposition rate.

AB - This report demonstrated that the open-circuit voltage (VOC) of organic photovoltaic devices could be altered by changing the deposition rate of donor. The VOC was higher when used a higher deposition rate of donor. Atomic force microscopic image of donor thin film showing the presence of pinholes indicated the strong molecular interaction at the lower deposition rate. These may cause a severe leakage current from acceptor to anode as observed in the dark current. Equivalent circuit model and temperature-dependent dark currents were utilized to realize the effect of reverse saturation current on VOC. The higher barrier height at the donor-acceptor interface was attributed to the improved VOC for the device with higher donor deposition rate.

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Understanding the open-circuit voltage of organic photovoltaic devices with donor deposited at different deposition rate

Abstract

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Conference

ASJC Scopus subject areas

UN SDGs

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