Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method

Shin Chuan Chiang; Chin Chih Yu; Chien Yie Tsay; Bor Chuan Chuang; Min Chi Wang; Chung Kwei Lin; Ming Ying Ma; Jiunn Yan Ou

Thin-film transistors with Zn_1-xMg_xO active layers fabricated by sol-gel method

Shin Chuan Chiang, Chin Chih Yu, Chien Yie Tsay, Bor Chuan Chuang, Min Chi Wang, Chung Kwei Lin, Ming Ying Ma, Jiunn Yan Ou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn _1-xMg_xO (x = 0 to 0.36) thin films were prepared and TFTs with Zn_1-xMg_xO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn_0.8Mg_0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn _1-xMg_xO TFTs were demonstrated to have n-type enhancement behavior.

Original language	English
Title of host publication	IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages	884-887
Number of pages	4
Publication status	Published - 2007
Externally published	Yes
Event	International Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan Duration: Jul 3 2007 → Jul 6 2007

Publication series

Name	IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Other

Other	International Display Manufacturing Conference and Exhibition, IDMC 2007
Country/Territory	Taiwan
City	Taipei
Period	7/3/07 → 7/6/07

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Cite this

Chiang, S. C., Yu, C. C., Tsay, C. Y., Chuang, B. C., Wang, M. C., Lin, C. K., Ma, M. Y., & Ou, J. Y. (2007). Thin-film transistors with Zn_1-xMg_xO active layers fabricated by sol-gel method. In IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings (pp. 884-887). (IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings).

Thin-film transistors with Zn_1-xMg_xO active layers fabricated by sol-gel method. / Chiang, Shin Chuan; Yu, Chin Chih; Tsay, Chien Yie et al.
IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings. 2007. p. 884-887 (IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chiang, SC, Yu, CC, Tsay, CY, Chuang, BC, Wang, MC, Lin, CK, Ma, MY & Ou, JY 2007, Thin-film transistors with Zn_1-xMg_xO active layers fabricated by sol-gel method. in IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings. IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings, pp. 884-887, International Display Manufacturing Conference and Exhibition, IDMC 2007, Taipei, Taiwan, 7/3/07.

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title = "Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method",

abstract = "Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn 1-xMgxO (x = 0 to 0.36) thin films were prepared and TFTs with Zn1-xMgxO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn 1-xMgxO TFTs were demonstrated to have n-type enhancement behavior.",

author = "Chiang, {Shin Chuan} and Yu, {Chin Chih} and Tsay, {Chien Yie} and Chuang, {Bor Chuan} and Wang, {Min Chi} and Lin, {Chung Kwei} and Ma, {Ming Ying} and Ou, {Jiunn Yan}",

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T1 - Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method

AU - Chiang, Shin Chuan

AU - Yu, Chin Chih

AU - Tsay, Chien Yie

AU - Chuang, Bor Chuan

AU - Wang, Min Chi

AU - Lin, Chung Kwei

AU - Ma, Ming Ying

AU - Ou, Jiunn Yan

PY - 2007

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N2 - Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn 1-xMgxO (x = 0 to 0.36) thin films were prepared and TFTs with Zn1-xMgxO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn 1-xMgxO TFTs were demonstrated to have n-type enhancement behavior.

AB - Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn 1-xMgxO (x = 0 to 0.36) thin films were prepared and TFTs with Zn1-xMgxO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn 1-xMgxO TFTs were demonstrated to have n-type enhancement behavior.

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