Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method

Shin Chuan Chiang; Chin Chih Yu; Chien Yie Tsay; Bor Chuan Chuang; Min Chi Wang; Chung Kwei Lin; Ming Ying Ma; Jiunn Yan Ou

Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method

Shin Chuan Chiang, Chin Chih Yu, Chien Yie Tsay, Bor Chuan Chuang, Min Chi Wang, Chung Kwei Lin, Ming Ying Ma, Jiunn Yan Ou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn _1-xMg_xO (x = 0 to 0.36) thin films were prepared and TFTs with Zn_1-xMg_xO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn_0.8Mg_0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn _1-xMg_xO TFTs were demonstrated to have n-type enhancement behavior.

Original language	English
Title of host publication	IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages	884-887
Number of pages	4
Publication status	Published - 2007
Externally published	Yes
Event	International Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan Duration: Jul 3 2007 → Jul 6 2007

Other

Other	International Display Manufacturing Conference and Exhibition, IDMC 2007
Country/Territory	Taiwan
City	Taipei
Period	7/3/07 → 7/6/07

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{659c053c6c7b4b43b0e05a830ab1714a,

title = "Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method",

abstract = "Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn 1-xMgxO (x = 0 to 0.36) thin films were prepared and TFTs with Zn1-xMgxO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn 1-xMgxO TFTs were demonstrated to have n-type enhancement behavior.",

author = "Chiang, {Shin Chuan} and Yu, {Chin Chih} and Tsay, {Chien Yie} and Chuang, {Bor Chuan} and Wang, {Min Chi} and Lin, {Chung Kwei} and Ma, {Ming Ying} and Ou, {Jiunn Yan}",

year = "2007",

language = "English",

isbn = "9789572852248",

pages = "884--887",

booktitle = "IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings",

note = "International Display Manufacturing Conference and Exhibition, IDMC 2007 ; Conference date: 03-07-2007 Through 06-07-2007",

}

TY - GEN

T1 - Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method

AU - Chiang, Shin Chuan

AU - Yu, Chin Chih

AU - Tsay, Chien Yie

AU - Chuang, Bor Chuan

AU - Wang, Min Chi

AU - Lin, Chung Kwei

AU - Ma, Ming Ying

AU - Ou, Jiunn Yan

PY - 2007

Y1 - 2007

N2 - Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn 1-xMgxO (x = 0 to 0.36) thin films were prepared and TFTs with Zn1-xMgxO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn 1-xMgxO TFTs were demonstrated to have n-type enhancement behavior.

AB - Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn 1-xMgxO (x = 0 to 0.36) thin films were prepared and TFTs with Zn1-xMgxO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn 1-xMgxO TFTs were demonstrated to have n-type enhancement behavior.

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M3 - Conference contribution

AN - SCOPUS:56049125516

SN - 9789572852248

SP - 884

EP - 887

BT - IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

T2 - International Display Manufacturing Conference and Exhibition, IDMC 2007

Y2 - 3 July 2007 through 6 July 2007

ER -

Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method

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ASJC Scopus subject areas

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