The effect of deposition parameters and post treatment on the electrical properties of Mo thin films

Cherng Yuh Su; Kuang Hsiang Liao; Cheng Tang Pan; Pei Wen Peng

doi:10.1016/j.tsf.2012.05.027

The effect of deposition parameters and post treatment on the electrical properties of Mo thin films

Cherng Yuh Su, Kuang Hsiang Liao, Cheng Tang Pan, Pei Wen Peng

School of Dental Technology

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

In this study, we deposited low-resistivity molybdenum (Mo) thin films on soda-lime glass substrates with good adhesion. We adjusted various deposition parameters such as the sputtering power (52-102 W), working distance (5.5-9 cm) and annealing temperature (26-400 °C) to investigate their impact on the sheet resistance. By using a DC magnetron sputtering system, we obtained Mo thin films having the lowest sheet resistance of 0.190 Ω/□ with a sputtering power of 82 W, working distance of 6.5 cm, and annealing temperature of 400 °C; in addition, these films had good adhesivity. These Mo thin films were suitable for use as the Mo back contact in Cu(In,Ga)Se ₂-based solar cells.

Original language	English
Pages (from-to)	5936-5939
Number of pages	4
Journal	Thin Solid Films
Volume	520
Issue number	18
DOIs	https://doi.org/10.1016/j.tsf.2012.05.027
Publication status	Published - Jul 1 2012

Keywords

Annealing temperature
Molybdenum
Sheet resistance
Solar cell back contact
Sputtering power
Working distance
X-ray diffraction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Metals and Alloys
Materials Chemistry
Surfaces, Coatings and Films
Surfaces and Interfaces

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10.1016/j.tsf.2012.05.027

Cite this

@article{d38ac59e46c54b19b9e6ec3f8016e875,

title = "The effect of deposition parameters and post treatment on the electrical properties of Mo thin films",

abstract = "In this study, we deposited low-resistivity molybdenum (Mo) thin films on soda-lime glass substrates with good adhesion. We adjusted various deposition parameters such as the sputtering power (52-102 W), working distance (5.5-9 cm) and annealing temperature (26-400 °C) to investigate their impact on the sheet resistance. By using a DC magnetron sputtering system, we obtained Mo thin films having the lowest sheet resistance of 0.190 Ω/□ with a sputtering power of 82 W, working distance of 6.5 cm, and annealing temperature of 400 °C; in addition, these films had good adhesivity. These Mo thin films were suitable for use as the Mo back contact in Cu(In,Ga)Se 2-based solar cells.",

keywords = "Annealing temperature, Molybdenum, Sheet resistance, Solar cell back contact, Sputtering power, Working distance, X-ray diffraction",

author = "Su, {Cherng Yuh} and Liao, {Kuang Hsiang} and Pan, {Cheng Tang} and Peng, {Pei Wen}",

year = "2012",

month = jul,

day = "1",

doi = "10.1016/j.tsf.2012.05.027",

language = "English",

volume = "520",

pages = "5936--5939",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "18",

}

TY - JOUR

T1 - The effect of deposition parameters and post treatment on the electrical properties of Mo thin films

AU - Su, Cherng Yuh

AU - Liao, Kuang Hsiang

AU - Pan, Cheng Tang

AU - Peng, Pei Wen

PY - 2012/7/1

Y1 - 2012/7/1

N2 - In this study, we deposited low-resistivity molybdenum (Mo) thin films on soda-lime glass substrates with good adhesion. We adjusted various deposition parameters such as the sputtering power (52-102 W), working distance (5.5-9 cm) and annealing temperature (26-400 °C) to investigate their impact on the sheet resistance. By using a DC magnetron sputtering system, we obtained Mo thin films having the lowest sheet resistance of 0.190 Ω/□ with a sputtering power of 82 W, working distance of 6.5 cm, and annealing temperature of 400 °C; in addition, these films had good adhesivity. These Mo thin films were suitable for use as the Mo back contact in Cu(In,Ga)Se 2-based solar cells.

AB - In this study, we deposited low-resistivity molybdenum (Mo) thin films on soda-lime glass substrates with good adhesion. We adjusted various deposition parameters such as the sputtering power (52-102 W), working distance (5.5-9 cm) and annealing temperature (26-400 °C) to investigate their impact on the sheet resistance. By using a DC magnetron sputtering system, we obtained Mo thin films having the lowest sheet resistance of 0.190 Ω/□ with a sputtering power of 82 W, working distance of 6.5 cm, and annealing temperature of 400 °C; in addition, these films had good adhesivity. These Mo thin films were suitable for use as the Mo back contact in Cu(In,Ga)Se 2-based solar cells.

KW - Annealing temperature

KW - Molybdenum

KW - Sheet resistance

KW - Solar cell back contact

KW - Sputtering power

KW - Working distance

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=84862158370&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862158370&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2012.05.027

DO - 10.1016/j.tsf.2012.05.027

M3 - Article

AN - SCOPUS:84862158370

SN - 0040-6090

VL - 520

SP - 5936

EP - 5939

JO - Thin Solid Films

JF - Thin Solid Films

IS - 18

ER -

The effect of deposition parameters and post treatment on the electrical properties of Mo thin films

Abstract

Keywords

ASJC Scopus subject areas

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