Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer

Chi Chang Wu; Wen F. Wu; Fu Hsiang Ko; Hsin Chiang You; Wen L. Yang

doi:10.1063/1.2920202

Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer

Chi Chang Wu, Wen F. Wu, Fu Hsiang Ko, Hsin Chiang You, Wen L. Yang

Research output: Contribution to journal › Article › peer-review

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Abstract

The thermal and morphological stability of NiSi is enhanced by inserting a polycrystalline (poly-Si) buffer layer between the Ni and poly-SiGe films. NiSi films formed on poly-Si/poly-SiGe stack layers possessed continuous, smooth structures after annealing at 500-850 °C. Moreover, nickel germanosilicide [Ni(Si, Ge)] lines formed on the poly-SiGe exhibited a fine-line effect, i.e., the sheet resistance increased upon decreasing the linewidth, whereas the sheet resistance of NiSi lines formed on the poly-Si/poly-SiGe stack layers remained less than 5 square. A model for the stress-confined grain growth and recrystallization is proposed to explain the improved properties of the poly-Si-buffered film.

Original language	English
Article number	182106
Journal	Applied Physics Letters
Volume	92
Issue number	18
DOIs	https://doi.org/10.1063/1.2920202
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer",

abstract = "The thermal and morphological stability of NiSi is enhanced by inserting a polycrystalline (poly-Si) buffer layer between the Ni and poly-SiGe films. NiSi films formed on poly-Si/poly-SiGe stack layers possessed continuous, smooth structures after annealing at 500-850 °C. Moreover, nickel germanosilicide [Ni(Si, Ge)] lines formed on the poly-SiGe exhibited a fine-line effect, i.e., the sheet resistance increased upon decreasing the linewidth, whereas the sheet resistance of NiSi lines formed on the poly-Si/poly-SiGe stack layers remained less than 5 square. A model for the stress-confined grain growth and recrystallization is proposed to explain the improved properties of the poly-Si-buffered film.",

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AU - Wu, Chi Chang

AU - Wu, Wen F.

AU - Ko, Fu Hsiang

AU - You, Hsin Chiang

AU - Yang, Wen L.

PY - 2008

Y1 - 2008

N2 - The thermal and morphological stability of NiSi is enhanced by inserting a polycrystalline (poly-Si) buffer layer between the Ni and poly-SiGe films. NiSi films formed on poly-Si/poly-SiGe stack layers possessed continuous, smooth structures after annealing at 500-850 °C. Moreover, nickel germanosilicide [Ni(Si, Ge)] lines formed on the poly-SiGe exhibited a fine-line effect, i.e., the sheet resistance increased upon decreasing the linewidth, whereas the sheet resistance of NiSi lines formed on the poly-Si/poly-SiGe stack layers remained less than 5 square. A model for the stress-confined grain growth and recrystallization is proposed to explain the improved properties of the poly-Si-buffered film.

AB - The thermal and morphological stability of NiSi is enhanced by inserting a polycrystalline (poly-Si) buffer layer between the Ni and poly-SiGe films. NiSi films formed on poly-Si/poly-SiGe stack layers possessed continuous, smooth structures after annealing at 500-850 °C. Moreover, nickel germanosilicide [Ni(Si, Ge)] lines formed on the poly-SiGe exhibited a fine-line effect, i.e., the sheet resistance increased upon decreasing the linewidth, whereas the sheet resistance of NiSi lines formed on the poly-Si/poly-SiGe stack layers remained less than 5 square. A model for the stress-confined grain growth and recrystallization is proposed to explain the improved properties of the poly-Si-buffered film.

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Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer

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