Abstract
In this letter, we demonstrate the key role of the Hf/Si interfacial layer (IL) in Al/Cu/IL/MoS2/TiN conductive bridge RAM. Owing to controlling Cu migration through Hf rather than Si, the Hf interface device offers consecutive >4000 DC cycles and long program/erase (P/E) endurance of gt; 2\times 10^{9}$ cycles under the low current operation of $100~\mu \text{A}$ at the fast switching speed of 100 ns. The Hf interface device shows gradual RESET, long-term potentiation/depression (LTP/LTD) pulses of 40/100 with small pulse width of 100 ns and a low power consumption of < 13 pJ is needed for artificial synapse applications.
Original language | English |
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Article number | 9035621 |
Pages (from-to) | 709-712 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 41 |
Issue number | 5 |
DOIs | |
Publication status | Published - May 2020 |
Externally published | Yes |
Keywords
- artificial synapse
- CBRAM
- Hf/Si interfacial layer
- High-performance
- MoS₂
- non-volatile memory
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering