Quantum dot light-emitting diode using solution-processable graphene oxide as the anode interfacial layer

Di Yan Wang; I. Sheng Wang; I. Sheng Huang; Yun Chieh Yeh; Shao Sian Li; Kun Hua Tu; Chia Chun Chen; Chun Wei Chen

doi:10.1021/jp210062x

Quantum dot light-emitting diode using solution-processable graphene oxide as the anode interfacial layer

Di Yan Wang, I. Sheng Wang, I. Sheng Huang, Yun Chieh Yeh, Shao Sian Li, Kun Hua Tu, Chia Chun Chen, Chun Wei Chen

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.

Original language	English
Pages (from-to)	10181-10185
Number of pages	5
Journal	Journal of Physical Chemistry C
Volume	116
Issue number	18
DOIs	https://doi.org/10.1021/jp210062x
Publication status	Published - May 10 2012
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Energy
Surfaces, Coatings and Films
Physical and Theoretical Chemistry

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10.1021/jp210062x

Cite this

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title = "Quantum dot light-emitting diode using solution-processable graphene oxide as the anode interfacial layer",

abstract = "In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.",

author = "Wang, \{Di Yan\} and Wang, \{I. Sheng\} and Huang, \{I. Sheng\} and Yeh, \{Yun Chieh\} and Li, \{Shao Sian\} and Tu, \{Kun Hua\} and Chen, \{Chia Chun\} and Chen, \{Chun Wei\}",

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doi = "10.1021/jp210062x",

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journal = "Journal of Physical Chemistry C",

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T1 - Quantum dot light-emitting diode using solution-processable graphene oxide as the anode interfacial layer

AU - Wang, Di Yan

AU - Wang, I. Sheng

AU - Huang, I. Sheng

AU - Yeh, Yun Chieh

AU - Li, Shao Sian

AU - Tu, Kun Hua

AU - Chen, Chia Chun

AU - Chen, Chun Wei

PY - 2012/5/10

Y1 - 2012/5/10

N2 - In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.

AB - In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.

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Quantum dot light-emitting diode using solution-processable graphene oxide as the anode interfacial layer

Abstract

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