Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Po Hsun Ho; Chun Hsiang Chen; Fu Yu Shih; Yih Ren Chang; Shao Sian Li; Wei Hua Wang; Min Chuan Shih; Wei Ting Chen; Ya Ping Chiu; Min Ken Li; Yi Siang Shih; Chun Wei Chen

doi:10.1002/adma.201503592

Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Po Hsun Ho
, Chun Hsiang Chen
, Fu Yu Shih
, Yih Ren Chang
, Shao Sian Li
, Wei Hua Wang
, Min Chuan Shih
, Wei Ting Chen
, Ya Ping Chiu
, Min Ken Li
, Yi Siang Shih
, Chun Wei Chen

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiO_x heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiO_x heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

Original language	English
Pages (from-to)	7809-7815
Number of pages	7
Journal	Advanced Materials
Volume	27
Issue number	47
DOIs	https://doi.org/10.1002/adma.201503592
Publication status	Published - Dec 16 2015
Externally published	Yes

Keywords

band gap opening
charge transfer
graphene heterostructures
ultrastrong photoinduced doping

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201503592

Cite this

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title = "Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer",

abstract = "Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.",

keywords = "band gap opening, charge transfer, graphene heterostructures, ultrastrong photoinduced doping",

author = "Ho, \{Po Hsun\} and Chen, \{Chun Hsiang\} and Shih, \{Fu Yu\} and Chang, \{Yih Ren\} and Li, \{Shao Sian\} and Wang, \{Wei Hua\} and Shih, \{Min Chuan\} and Chen, \{Wei Ting\} and Chiu, \{Ya Ping\} and Li, \{Min Ken\} and Shih, \{Yi Siang\} and Chen, \{Chun Wei\}",

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year = "2015",

month = dec,

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doi = "10.1002/adma.201503592",

language = "English",

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journal = "Advanced Materials",

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T1 - Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

AU - Ho, Po Hsun

AU - Chen, Chun Hsiang

AU - Shih, Fu Yu

AU - Chang, Yih Ren

AU - Li, Shao Sian

AU - Wang, Wei Hua

AU - Shih, Min Chuan

AU - Chen, Wei Ting

AU - Chiu, Ya Ping

AU - Li, Min Ken

AU - Shih, Yi Siang

AU - Chen, Chun Wei

PY - 2015/12/16

Y1 - 2015/12/16

N2 - Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

AB - Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

KW - band gap opening

KW - charge transfer

KW - graphene heterostructures

KW - ultrastrong photoinduced doping

UR - https://www.scopus.com/pages/publications/84954357392

UR - https://www.scopus.com/pages/publications/84954357392#tab=citedBy

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M3 - Article

AN - SCOPUS:84954357392

SN - 0935-9648

VL - 27

SP - 7809

EP - 7815

JO - Advanced Materials

JF - Advanced Materials

IS - 47

ER -

Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Abstract

Keywords

ASJC Scopus subject areas

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