Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Po Hsun Ho; Chun Hsiang Chen; Fu Yu Shih; Yih Ren Chang; Shao Sian Li; Wei Hua Wang; Min Chuan Shih; Wei Ting Chen; Ya Ping Chiu; Min Ken Li; Yi Siang Shih; Chun Wei Chen

doi:10.1002/adma.201503592

Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Po Hsun Ho, Chun Hsiang Chen, Fu Yu Shih, Yih Ren Chang, Shao Sian Li, Wei Hua Wang, Min Chuan Shih, Wei Ting Chen, Ya Ping Chiu, Min Ken Li, Yi Siang Shih, Chun Wei Chen

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiO_x heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiO_x heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

Original language	English
Pages (from-to)	7809-7815
Number of pages	7
Journal	Advanced Materials
Volume	27
Issue number	47
DOIs	https://doi.org/10.1002/adma.201503592
Publication status	Published - Dec 16 2015
Externally published	Yes

Keywords

band gap opening
charge transfer
graphene heterostructures
ultrastrong photoinduced doping

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201503592

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title = "Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer",

abstract = "Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.",

keywords = "band gap opening, charge transfer, graphene heterostructures, ultrastrong photoinduced doping",

author = "Ho, {Po Hsun} and Chen, {Chun Hsiang} and Shih, {Fu Yu} and Chang, {Yih Ren} and Li, {Shao Sian} and Wang, {Wei Hua} and Shih, {Min Chuan} and Chen, {Wei Ting} and Chiu, {Ya Ping} and Li, {Min Ken} and Shih, {Yi Siang} and Chen, {Chun Wei}",

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year = "2015",

month = dec,

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doi = "10.1002/adma.201503592",

language = "English",

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journal = "Advanced Materials",

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T1 - Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

AU - Ho, Po Hsun

AU - Chen, Chun Hsiang

AU - Shih, Fu Yu

AU - Chang, Yih Ren

AU - Li, Shao Sian

AU - Wang, Wei Hua

AU - Shih, Min Chuan

AU - Chen, Wei Ting

AU - Chiu, Ya Ping

AU - Li, Min Ken

AU - Shih, Yi Siang

AU - Chen, Chun Wei

PY - 2015/12/16

Y1 - 2015/12/16

N2 - Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

AB - Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

KW - band gap opening

KW - charge transfer

KW - graphene heterostructures

KW - ultrastrong photoinduced doping

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JO - Advanced Materials

JF - Advanced Materials

IS - 47

ER -

Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Abstract

Keywords

ASJC Scopus subject areas

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