Abstract
In this paper, we present a photovoltaics system with a Cu (In, Ga) (S, Se)2 (CIGS) film that can be applied in portable power devices for electronic products. The primary material of the major photovoltaics film layer is CIGS thin film. The photovoltaics system is made on an AZO/ZnO/CdS/CIGS/Mo/flexible substrate. An SEM photo of the CIGS/Mo/flexible substrate is shown in the results. All of these technologies typically use low-temperature deposition techniques. Although advances in the low-temperature deposition of CIGS cells have eliminated this performance difference, the best performance is usually from batteries deposited on a flexible substrate. The parameters of the two samples contain the total area of the deposited CIGS material and the photocurrent generated by the image. An area of 1.043 cm2 can produce a current of 0.0324 A, while an area of 225.2 cm2 can produce a current of 6.6035 A.
Original language | English |
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Pages (from-to) | 96-103 |
Number of pages | 8 |
Journal | Microelectronics Reliability |
Volume | 99 |
DOIs | |
Publication status | Published - Aug 1 2019 |
Keywords
- Cu (In, Ga) (S, Se) (CIGS) solar cell
- Performance
- Photovoltaics
- Portable device
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Safety, Risk, Reliability and Quality
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering