Phase transformation of tungsten films deposited by diode and inductively coupled plasma magnetron sputtering

G. S. Chen; H. S. Tian; C. K. Lin; Gin Shiang Chen; H. Y. Lee

doi:10.1116/1.1642651

Phase transformation of tungsten films deposited by diode and inductively coupled plasma magnetron sputtering

G. S. Chen, H. S. Tian, C. K. Lin, Gin Shiang Chen, H. Y. Lee

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The phase transition behavior of tungsten thin films deposited using diode and inductively coupled plasma (ICP) magnetron sputtering was studied. The grazing incidence x-ray diffraction (GIXRD), scanning electron microscopy and transition electron microscopy were used to study the effects of various deposition parameters on the transition of the film's phase. It was found that films deposited by diode sputtering were mainly dominated by β-W, which yielded electrical resistivity ranging from ∼50 to ∼190 μω. On the other hand, the ICP sputtering was capable of depositing α-W films with resistivity of only ∼20 μω using adequate substrate bias.

Original language	English
Pages (from-to)	281-286
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	2
DOIs	https://doi.org/10.1116/1.1642651
Publication status	Published - Mar 2004
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces, Coatings and Films
Surfaces and Interfaces

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title = "Phase transformation of tungsten films deposited by diode and inductively coupled plasma magnetron sputtering",

abstract = "The phase transition behavior of tungsten thin films deposited using diode and inductively coupled plasma (ICP) magnetron sputtering was studied. The grazing incidence x-ray diffraction (GIXRD), scanning electron microscopy and transition electron microscopy were used to study the effects of various deposition parameters on the transition of the film's phase. It was found that films deposited by diode sputtering were mainly dominated by β-W, which yielded electrical resistivity ranging from ∼50 to ∼190 μω. On the other hand, the ICP sputtering was capable of depositing α-W films with resistivity of only ∼20 μω using adequate substrate bias.",

author = "Chen, {G. S.} and Tian, {H. S.} and Lin, {C. K.} and Chen, {Gin Shiang} and Lee, {H. Y.}",

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AU - Chen, G. S.

AU - Tian, H. S.

AU - Lin, C. K.

AU - Chen, Gin Shiang

AU - Lee, H. Y.

PY - 2004/3

Y1 - 2004/3

N2 - The phase transition behavior of tungsten thin films deposited using diode and inductively coupled plasma (ICP) magnetron sputtering was studied. The grazing incidence x-ray diffraction (GIXRD), scanning electron microscopy and transition electron microscopy were used to study the effects of various deposition parameters on the transition of the film's phase. It was found that films deposited by diode sputtering were mainly dominated by β-W, which yielded electrical resistivity ranging from ∼50 to ∼190 μω. On the other hand, the ICP sputtering was capable of depositing α-W films with resistivity of only ∼20 μω using adequate substrate bias.

AB - The phase transition behavior of tungsten thin films deposited using diode and inductively coupled plasma (ICP) magnetron sputtering was studied. The grazing incidence x-ray diffraction (GIXRD), scanning electron microscopy and transition electron microscopy were used to study the effects of various deposition parameters on the transition of the film's phase. It was found that films deposited by diode sputtering were mainly dominated by β-W, which yielded electrical resistivity ranging from ∼50 to ∼190 μω. On the other hand, the ICP sputtering was capable of depositing α-W films with resistivity of only ∼20 μω using adequate substrate bias.

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Phase transformation of tungsten films deposited by diode and inductively coupled plasma magnetron sputtering

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