Performance of sol-gel deposited Zn1 - xMgxO films used as active channel layer for thin-film transistors

Chien Yie Tsay, Hua Chi Cheng, Min Chi Wang, Pee Yew Lee, Chia Fu Chen, Chung Kwei Lin

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


ZnO thin-film transistors (TFTs) have attracted considerable R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO thin films may be controlled by doping with ternary element, for instance Al, Ga, In, Mg, Zr, etc. In this study, Zn1 - xMgxO (x = 0 to 0.36) thin films were deposited on glass substrates by spin coating. The as-deposited films were baked at 300 °C for 10 min and then annealed at 500 °C for 1 h in air. The results show that, addition of Mg-species in ZnO films markedly enhanced the uniformity of film thickness and improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency of 92%, an increase of ∼ 15% over a pure ZnO film, and the rms roughness value decreased to 1.63. The Zn1 - xMgxO TFTs were demonstrated to have n-type enhancement behavior. The optimum device with Zn0.8Mg0.2O channel layer had a field-effect mobility of 0.1 cm2/V s, a threshold voltage of 6.0 V, and an on/off ratio more than 107.

Original languageEnglish
Pages (from-to)1323-1328
Number of pages6
JournalSurface and Coatings Technology
Issue number4-7
Publication statusPublished - Dec 15 2007
Externally publishedYes


  • Sol-gel method
  • Thin-film transistors
  • ZnMgO films

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces


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