P16INK4a detection using an ultra-sensitive silicon nanowire field effect transistor

Jia Yang Hung; Yankuba B. Manga; Yu Ju Chen; Haw Ming Huang; Wen Luh Yang; Chi-Chang Wu

doi:10.1109/ISNE.2018.8394715

P16^INK4a detection using an ultra-sensitive silicon nanowire field effect transistor

Jia Yang Hung, Yankuba B. Manga, Yu Ju Chen, Haw Ming Huang, Wen Luh Yang, Chi-Chang Wu

Research output: Chapter in Book/Report/Conference proceeding › Chapter

3 Citations (Scopus)

Abstract

In general, if cancer can be earlier detected and treated, the chance of recovery is relatively much higher. Among all advanced molecular diagnostic techniques, silicon nanowire field effect transistor sensors have proven to have extremely high sensitivity and specificity. Through side-wall spacer etch technique which possesses simpler and cheaper process steps to manufacture polycrystalline silicon nanowire field effect transistor sensor. And p16^INK4a protein which is related to cervical cancer, is taken as the target of detection. When human is infected with high-risk HPV, p16^INK4a protein will be overexpressed. Therefore, we can know the extent of HPV infection by detecting p16^INK4a protein, and then assess whether there is the risk of cervical cancer.

Original language	English
Title of host publication	Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781538614457
ISBN (Print)	9781538614457
DOIs	https://doi.org/10.1109/ISNE.2018.8394715
Publication status	Published - Jun 22 2018
Event	7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan Duration: May 7 2018 → May 9 2018

Publication series

Name	Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Other

Other	7th International Symposium on Next-Generation Electronics, ISNE 2018
Country/Territory	Taiwan
City	Taipei
Period	5/7/18 → 5/9/18

Keywords

Biosensor
Early diagnosis
Poly-SiNW Field Effect Transistor
Side-wall spacer
p16 protein

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ISNE.2018.8394715

Cite this

Hung, J. Y., Manga, Y. B., Chen, Y. J., Huang, H. M., Yang, W. L., & Wu, C.-C. (2018). P16^INK4a detection using an ultra-sensitive silicon nanowire field effect transistor. In Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018 (pp. 1-2). (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2018.8394715

P16^INK4a detection using an ultra-sensitive silicon nanowire field effect transistor. / Hung, Jia Yang; Manga, Yankuba B.; Chen, Yu Ju et al.
Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2 (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Hung, JY, Manga, YB, Chen, YJ, Huang, HM, Yang, WL & Wu, C-C 2018, P16^INK4a detection using an ultra-sensitive silicon nanowire field effect transistor. in Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 7th International Symposium on Next-Generation Electronics, ISNE 2018, Taipei, Taiwan, 5/7/18. https://doi.org/10.1109/ISNE.2018.8394715

Hung JY, Manga YB, Chen YJ, Huang HM, Yang WL, Wu CC. P16^INK4a detection using an ultra-sensitive silicon nanowire field effect transistor. In Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-2. (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). doi: 10.1109/ISNE.2018.8394715

Hung, Jia Yang ; Manga, Yankuba B. ; Chen, Yu Ju et al. / P16^INK4a detection using an ultra-sensitive silicon nanowire field effect transistor. Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-2 (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).

@inbook{47b02b4bbdb74a589e98f602dca0cde0,

title = "P16INK4a detection using an ultra-sensitive silicon nanowire field effect transistor",

abstract = "In general, if cancer can be earlier detected and treated, the chance of recovery is relatively much higher. Among all advanced molecular diagnostic techniques, silicon nanowire field effect transistor sensors have proven to have extremely high sensitivity and specificity. Through side-wall spacer etch technique which possesses simpler and cheaper process steps to manufacture polycrystalline silicon nanowire field effect transistor sensor. And p16INK4a protein which is related to cervical cancer, is taken as the target of detection. When human is infected with high-risk HPV, p16INK4a protein will be overexpressed. Therefore, we can know the extent of HPV infection by detecting p16INK4a protein, and then assess whether there is the risk of cervical cancer.",

keywords = "Biosensor, Early diagnosis, Poly-SiNW Field Effect Transistor, Side-wall spacer, p16 protein",

author = "Hung, {Jia Yang} and Manga, {Yankuba B.} and Chen, {Yu Ju} and Huang, {Haw Ming} and Yang, {Wen Luh} and Chi-Chang Wu",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th International Symposium on Next-Generation Electronics, ISNE 2018 ; Conference date: 07-05-2018 Through 09-05-2018",

year = "2018",

month = jun,

day = "22",

doi = "10.1109/ISNE.2018.8394715",

language = "English",

isbn = "9781538614457",

series = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1--2",

booktitle = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",

}

TY - CHAP

T1 - P16INK4a detection using an ultra-sensitive silicon nanowire field effect transistor

AU - Hung, Jia Yang

AU - Manga, Yankuba B.

AU - Chen, Yu Ju

AU - Huang, Haw Ming

AU - Yang, Wen Luh

AU - Wu, Chi-Chang

PY - 2018/6/22

Y1 - 2018/6/22

N2 - In general, if cancer can be earlier detected and treated, the chance of recovery is relatively much higher. Among all advanced molecular diagnostic techniques, silicon nanowire field effect transistor sensors have proven to have extremely high sensitivity and specificity. Through side-wall spacer etch technique which possesses simpler and cheaper process steps to manufacture polycrystalline silicon nanowire field effect transistor sensor. And p16INK4a protein which is related to cervical cancer, is taken as the target of detection. When human is infected with high-risk HPV, p16INK4a protein will be overexpressed. Therefore, we can know the extent of HPV infection by detecting p16INK4a protein, and then assess whether there is the risk of cervical cancer.

AB - In general, if cancer can be earlier detected and treated, the chance of recovery is relatively much higher. Among all advanced molecular diagnostic techniques, silicon nanowire field effect transistor sensors have proven to have extremely high sensitivity and specificity. Through side-wall spacer etch technique which possesses simpler and cheaper process steps to manufacture polycrystalline silicon nanowire field effect transistor sensor. And p16INK4a protein which is related to cervical cancer, is taken as the target of detection. When human is infected with high-risk HPV, p16INK4a protein will be overexpressed. Therefore, we can know the extent of HPV infection by detecting p16INK4a protein, and then assess whether there is the risk of cervical cancer.

KW - Biosensor

KW - Early diagnosis

KW - Poly-SiNW Field Effect Transistor

KW - Side-wall spacer

KW - p16 protein

UR - http://www.scopus.com/inward/record.url?scp=85050177762&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050177762&partnerID=8YFLogxK

U2 - 10.1109/ISNE.2018.8394715

DO - 10.1109/ISNE.2018.8394715

M3 - Chapter

AN - SCOPUS:85050177762

SN - 9781538614457

T3 - Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

SP - 1

EP - 2

BT - Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th International Symposium on Next-Generation Electronics, ISNE 2018

Y2 - 7 May 2018 through 9 May 2018

ER -