On the characteristics of AlGaN films grown on (111) and (001) Si substrates

Cheng Liang Wang; Jyh Rong Gong; Wei Tsai Liao; Wei Lin Wang; Tai Yuan Lin; Chung Kwei Lin

doi:10.1016/j.ssc.2005.10.008

On the characteristics of AlGaN films grown on (111) and (001) Si substrates

Cheng Liang Wang
, Jyh Rong Gong
, Wei Tsai Liao
, Wei Lin Wang
, Tai Yuan Lin
, Chung Kwei Lin

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

High Al-content Al_xGa_1-xN films were deposited on (001) and (111) Si substrates at 1000°C using high temperature AlN buffer layers. Experimental results show that Al_xGa_1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content Al_xGa_1-xN/(111) Si samples but they were not observed in the Al_xGa_1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline Al_xGa_1-xN films were achieved on (111) Si substrates while columnar structure was observed in the Al_xGa_1-xN/(001) Si samples. According to the depth profiles of Al_xGa_1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al _xGa_1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the Al_xGa_1-xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.

Original language	English
Pages (from-to)	63-66
Number of pages	4
Journal	Solid State Communications
Volume	137
Issue number	1-2
DOIs	https://doi.org/10.1016/j.ssc.2005.10.008
Publication status	Published - Jan 2006
Externally published	Yes

Keywords

A. AlGaN/Si
B. OMVPE
D. OM and TEM
D. Photoluminescence

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2005.10.008

Cite this

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title = "On the characteristics of AlGaN films grown on (111) and (001) Si substrates",

abstract = "High Al-content AlxGa1-xN films were deposited on (001) and (111) Si substrates at 1000°C using high temperature AlN buffer layers. Experimental results show that AlxGa1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1-xN/(111) Si samples but they were not observed in the AlxGa1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1-xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1-xN/(001) Si samples. According to the depth profiles of AlxGa1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al xGa1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1-xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.",

keywords = "A. AlGaN/Si, B. OMVPE, D. OM and TEM, D. Photoluminescence",

author = "Wang, \{Cheng Liang\} and Gong, \{Jyh Rong\} and Liao, \{Wei Tsai\} and Wang, \{Wei Lin\} and Lin, \{Tai Yuan\} and Lin, \{Chung Kwei\}",

year = "2006",

month = jan,

doi = "10.1016/j.ssc.2005.10.008",

language = "English",

volume = "137",

pages = "63--66",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "1-2",

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TY - JOUR

T1 - On the characteristics of AlGaN films grown on (111) and (001) Si substrates

AU - Wang, Cheng Liang

AU - Gong, Jyh Rong

AU - Liao, Wei Tsai

AU - Wang, Wei Lin

AU - Lin, Tai Yuan

AU - Lin, Chung Kwei

PY - 2006/1

Y1 - 2006/1

N2 - High Al-content AlxGa1-xN films were deposited on (001) and (111) Si substrates at 1000°C using high temperature AlN buffer layers. Experimental results show that AlxGa1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1-xN/(111) Si samples but they were not observed in the AlxGa1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1-xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1-xN/(001) Si samples. According to the depth profiles of AlxGa1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al xGa1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1-xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.

AB - High Al-content AlxGa1-xN films were deposited on (001) and (111) Si substrates at 1000°C using high temperature AlN buffer layers. Experimental results show that AlxGa1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1-xN/(111) Si samples but they were not observed in the AlxGa1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1-xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1-xN/(001) Si samples. According to the depth profiles of AlxGa1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al xGa1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1-xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.

KW - A. AlGaN/Si

KW - B. OMVPE

KW - D. OM and TEM

KW - D. Photoluminescence

UR - https://www.scopus.com/pages/publications/28844475158

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DO - 10.1016/j.ssc.2005.10.008

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AN - SCOPUS:28844475158

SN - 0038-1098

VL - 137

SP - 63

EP - 66

JO - Solid State Communications

JF - Solid State Communications

IS - 1-2

ER -

On the characteristics of AlGaN films grown on (111) and (001) Si substrates

Abstract

Keywords

ASJC Scopus subject areas

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