On the characteristics of AlGaN films grown on (111) and (001) Si substrates

Cheng Liang Wang, Jyh Rong Gong, Wei Tsai Liao, Wei Lin Wang, Tai Yuan Lin, Chung Kwei Lin

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


High Al-content AlxGa1-xN films were deposited on (001) and (111) Si substrates at 1000°C using high temperature AlN buffer layers. Experimental results show that AlxGa1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1-xN/(111) Si samples but they were not observed in the AlxGa1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1-xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1-xN/(001) Si samples. According to the depth profiles of AlxGa1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al xGa1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1-xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.

Original languageEnglish
Pages (from-to)63-66
Number of pages4
JournalSolid State Communications
Issue number1-2
Publication statusPublished - Jan 2006
Externally publishedYes


  • A. AlGaN/Si
  • B. OMVPE
  • D. OM and TEM
  • D. Photoluminescence

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry


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