Novel sol-gel derived SONOS-type nanocrystal memory

Chi Chang Wu; Hsin Chiang You; Fu Hsiang Ko; Wen Luh Yang

doi:10.1109/INEC.2010.5424933

Novel sol-gel derived SONOS-type nanocrystal memory

Chi Chang Wu, Hsin Chiang You, Fu Hsiang Ko, Wen Luh Yang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 10⁶ sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 10⁴ program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	1228-1229
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424933
Publication status	Published - 2010
Externally published	Yes
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: Jan 3 2010 → Jan 8 2010

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	1/3/10 → 1/8/10

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/INEC.2010.5424933

Cite this

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title = "Novel sol-gel derived SONOS-type nanocrystal memory",

abstract = "A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.",

author = "Wu, {Chi Chang} and You, {Hsin Chiang} and Ko, {Fu Hsiang} and Yang, {Wen Luh}",

year = "2010",

doi = "10.1109/INEC.2010.5424933",

language = "English",

isbn = "9781424435449",

pages = "1228--1229",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

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T1 - Novel sol-gel derived SONOS-type nanocrystal memory

AU - Wu, Chi Chang

AU - You, Hsin Chiang

AU - Ko, Fu Hsiang

AU - Yang, Wen Luh

PY - 2010

Y1 - 2010

N2 - A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.

AB - A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.

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BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010

Y2 - 3 January 2010 through 8 January 2010

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Novel sol-gel derived SONOS-type nanocrystal memory

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