TY - GEN
T1 - Novel IrOx/SiO2/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection
AU - Jana, S.
AU - Samanta, S.
AU - Roy, S.
AU - Qiu, J. T.
AU - Maikap, S.
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/7/3
Y1 - 2018/7/3
N2 - Novel IrOx/SiO2/W 10x10 μm2 cross-point structure has been introduced for high-density resistive memory as well as urea/LOXL2 sensing for the first time. The Ir0/Ir3+/Ir4+ oxidation states are confirmed by X-ray photo-electron spectroscopy (XPS) analysis. A dc endurance of > 1000 cycles at low current compliance (CC) of 200 nA and long program/erase (P/E) endurance of >1010 cycles with a small pulse width of 100 ns are obtained. Super-nernstian pH sensitivity of 140 mV/pH with 99.45% linearity, and LOXL2 with a low concentration of 1 pM through porous IrOx membrane are obtained.
AB - Novel IrOx/SiO2/W 10x10 μm2 cross-point structure has been introduced for high-density resistive memory as well as urea/LOXL2 sensing for the first time. The Ir0/Ir3+/Ir4+ oxidation states are confirmed by X-ray photo-electron spectroscopy (XPS) analysis. A dc endurance of > 1000 cycles at low current compliance (CC) of 200 nA and long program/erase (P/E) endurance of >1010 cycles with a small pulse width of 100 ns are obtained. Super-nernstian pH sensitivity of 140 mV/pH with 99.45% linearity, and LOXL2 with a low concentration of 1 pM through porous IrOx membrane are obtained.
UR - http://www.scopus.com/inward/record.url?scp=85050480515&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85050480515&partnerID=8YFLogxK
U2 - 10.1109/VLSI-TSA.2018.8403860
DO - 10.1109/VLSI-TSA.2018.8403860
M3 - Conference contribution
AN - SCOPUS:85050480515
T3 - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
SP - 1
EP - 2
BT - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
Y2 - 16 April 2018 through 19 April 2018
ER -