Novel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memory

Hsin Chiang You; Chi Chang Wu; Fu Hsiang Ko; Tan Fu Lei; Wen Luh Yang

doi:10.1116/1.2794327

Novel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memory

Hsin Chiang You, Chi Chang Wu, Fu Hsiang Ko, Tan Fu Lei, Wen Luh Yang

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The authors use a very simple sol-gel spin coating method at 900 °C and 1 min rapid thermal annealing to fabricate three different poly-Si-oxide- nitride-oxide-silicon-type flash memories. The memory windows estimated from the curve of drain current versus applied gate voltage are 3, 3.3, and 4 V for (i) Hf O2 thin film, (ii) hafnium silicate nanocrystal, and (iii) coexisted hafnium silicate and zirconium silicate nanocrystal memory, respectively. Together with the measurement from gate disturbance and drain disturbance on these fabricated devices, the coexisted nanocrystal devices exhibit better reliability than both the thin film type memory and single nanocrystal type memory.

Original language	English
Pages (from-to)	2568-2571
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25
Issue number	6
DOIs	https://doi.org/10.1116/1.2794327
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Cite this

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title = "Novel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memory",

abstract = "The authors use a very simple sol-gel spin coating method at 900 °C and 1 min rapid thermal annealing to fabricate three different poly-Si-oxide- nitride-oxide-silicon-type flash memories. The memory windows estimated from the curve of drain current versus applied gate voltage are 3, 3.3, and 4 V for (i) Hf O2 thin film, (ii) hafnium silicate nanocrystal, and (iii) coexisted hafnium silicate and zirconium silicate nanocrystal memory, respectively. Together with the measurement from gate disturbance and drain disturbance on these fabricated devices, the coexisted nanocrystal devices exhibit better reliability than both the thin film type memory and single nanocrystal type memory.",

author = "You, {Hsin Chiang} and Wu, {Chi Chang} and Ko, {Fu Hsiang} and Lei, {Tan Fu} and Yang, {Wen Luh}",

note = "Funding Information: This research was financially supported by the Ministry of Education “Aim for the Top University” program, and we thank the National Nano Device Laboratories through Contract No. NDL-95S-C130.",

year = "2007",

doi = "10.1116/1.2794327",

language = "English",

volume = "25",

pages = "2568--2571",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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TY - JOUR

T1 - Novel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memory

AU - You, Hsin Chiang

AU - Wu, Chi Chang

AU - Ko, Fu Hsiang

AU - Lei, Tan Fu

AU - Yang, Wen Luh

N1 - Funding Information: This research was financially supported by the Ministry of Education “Aim for the Top University” program, and we thank the National Nano Device Laboratories through Contract No. NDL-95S-C130.

PY - 2007

Y1 - 2007

N2 - The authors use a very simple sol-gel spin coating method at 900 °C and 1 min rapid thermal annealing to fabricate three different poly-Si-oxide- nitride-oxide-silicon-type flash memories. The memory windows estimated from the curve of drain current versus applied gate voltage are 3, 3.3, and 4 V for (i) Hf O2 thin film, (ii) hafnium silicate nanocrystal, and (iii) coexisted hafnium silicate and zirconium silicate nanocrystal memory, respectively. Together with the measurement from gate disturbance and drain disturbance on these fabricated devices, the coexisted nanocrystal devices exhibit better reliability than both the thin film type memory and single nanocrystal type memory.

AB - The authors use a very simple sol-gel spin coating method at 900 °C and 1 min rapid thermal annealing to fabricate three different poly-Si-oxide- nitride-oxide-silicon-type flash memories. The memory windows estimated from the curve of drain current versus applied gate voltage are 3, 3.3, and 4 V for (i) Hf O2 thin film, (ii) hafnium silicate nanocrystal, and (iii) coexisted hafnium silicate and zirconium silicate nanocrystal memory, respectively. Together with the measurement from gate disturbance and drain disturbance on these fabricated devices, the coexisted nanocrystal devices exhibit better reliability than both the thin film type memory and single nanocrystal type memory.

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Novel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memory

Abstract

ASJC Scopus subject areas

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