Near infrared photodetector based on polymer and indium nitride nanorod organic/inorganic hybrids

Wei Jung Lai, Shao Sian Li, Chih Cheng Lin, Chun Chiang Kuo, Chun Wei Chen, Kuei Hsien Chen, Li Chyong Chen

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

We propose a nanostructured near infrared photodetector based on indium nitride (InN) nanorod/poly(3-hexylthiophene) hybrids. The current-voltage characteristic of the hybrid device demonstrates the typical p-n heterojunction diode behavior, consisting of p-type polymer and n-type InN nanorods. The device shows a photoresponse range of 900-1260 nm under various reverse biases. An external quantum efficiency of 3.4% at 900 nm operated at -10 V reverse bias was obtained, which is comparable with devices based on lead sulfide and lead selenide hybrid systems.

Original languageEnglish
Pages (from-to)653-656
Number of pages4
JournalScripta Materialia
Volume63
Issue number6
DOIs
Publication statusPublished - Sept 1 2010
Externally publishedYes

Keywords

  • Chemical vapor deposition (CVD)
  • Composites
  • Nanostructure
  • Polymer matrix

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics

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