Nanocrystallization and interfacial tension of sol-gel derived memory

Chi Chang Wu; Yi Jen Tsai; Min Ching Chu; Shao Ming Yang; Fu Hsiang Ko; Pin Lin Liu; Wen Luh Yang; Hsin Chiang You

doi:10.1063/1.2904626

Nanocrystallization and interfacial tension of sol-gel derived memory

Chi Chang Wu, Yi Jen Tsai, Min Ching Chu, Shao Ming Yang, Fu Hsiang Ko, Pin Lin Liu, Wen Luh Yang, Hsin Chiang You

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The formation of the nanocrystals (NCs) by using the sol-gel spin-coating method at various annealing temperatures had been studied. The film started to form the islands at 600 °C annealing, and finally transferred into NCs at 900 °C. A model was proposed to explain the transformation of thin film. The morphology of sol-gel thin film at 600 °C annealing was varied and had higher interfacial energy. The crystallized process at 900 °C annealing could minimize the energy. The retention for 900 °C annealed sample exhibited less than 30% charge loss after 106 s at 125 °C measurement.

Original language	English
Article number	123111
Journal	Applied Physics Letters
Volume	92
Issue number	12
DOIs	https://doi.org/10.1063/1.2904626
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Nanocrystallization and interfacial tension of sol-gel derived memory",

abstract = "The formation of the nanocrystals (NCs) by using the sol-gel spin-coating method at various annealing temperatures had been studied. The film started to form the islands at 600 °C annealing, and finally transferred into NCs at 900 °C. A model was proposed to explain the transformation of thin film. The morphology of sol-gel thin film at 600 °C annealing was varied and had higher interfacial energy. The crystallized process at 900 °C annealing could minimize the energy. The retention for 900 °C annealed sample exhibited less than 30% charge loss after 106 s at 125 °C measurement.",

author = "Wu, {Chi Chang} and Tsai, {Yi Jen} and Chu, {Min Ching} and Yang, {Shao Ming} and Ko, {Fu Hsiang} and Liu, {Pin Lin} and Yang, {Wen Luh} and You, {Hsin Chiang}",

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AU - Wu, Chi Chang

AU - Tsai, Yi Jen

AU - Chu, Min Ching

AU - Yang, Shao Ming

AU - Ko, Fu Hsiang

AU - Liu, Pin Lin

AU - Yang, Wen Luh

AU - You, Hsin Chiang

PY - 2008

Y1 - 2008

N2 - The formation of the nanocrystals (NCs) by using the sol-gel spin-coating method at various annealing temperatures had been studied. The film started to form the islands at 600 °C annealing, and finally transferred into NCs at 900 °C. A model was proposed to explain the transformation of thin film. The morphology of sol-gel thin film at 600 °C annealing was varied and had higher interfacial energy. The crystallized process at 900 °C annealing could minimize the energy. The retention for 900 °C annealed sample exhibited less than 30% charge loss after 106 s at 125 °C measurement.

AB - The formation of the nanocrystals (NCs) by using the sol-gel spin-coating method at various annealing temperatures had been studied. The film started to form the islands at 600 °C annealing, and finally transferred into NCs at 900 °C. A model was proposed to explain the transformation of thin film. The morphology of sol-gel thin film at 600 °C annealing was varied and had higher interfacial energy. The crystallized process at 900 °C annealing could minimize the energy. The retention for 900 °C annealed sample exhibited less than 30% charge loss after 106 s at 125 °C measurement.

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Nanocrystallization and interfacial tension of sol-gel derived memory

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