Low-temperature fabrication of superconducting FeSe thin films by pulsed laser deposition

Ta Kun Chen; Jiu Yong Luo; Chung Ting Ke; Hsian Hong Chang; Tzu Wen Huang; Kuo Wei Yeh; Chung Chieh Chang; Po Chun Hsu; Chun Te Wu; Ming Jye Wang; Mau Kuen Wu

doi:10.1016/j.tsf.2010.06.002

Low-temperature fabrication of superconducting FeSe thin films by pulsed laser deposition

Ta Kun Chen, Jiu Yong Luo, Chung Ting Ke, Hsian Hong Chang, Tzu Wen Huang, Kuo Wei Yeh, Chung Chieh Chang, Po Chun Hsu, Chun Te Wu, Ming Jye Wang, Mau Kuen Wu

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

Superconducting FeSe thin films were prepared at a substrate temperature of 320 °C by pulsed laser deposition. X-ray diffraction and transmission electron microscopic analyses showed that highly c-axis-orientated and high-quality films were obtained on various substrate materials, including single-crystal MgO, LaAlO₃, SrTiO₃ and (100)-Si, and amorphous-SiO_x, at such low temperature. From transport measurements all the films showed low-temperature structural phase transition at ∼ 60-90 K and superconducting transition at onset temperature varies from ∼ 7 K to < 2 K, depending on the substrate used. The transport property of FeSe film on Si was found most different from all the others, in spite of their similarity in structural analysis. Chemical analysis demonstrated that Fe and Se homogeneously distributed in the film and the stoichiometry of FeSe and the bonding states of Fe and Se are as well uniform along the film growth direction.

Original language	English
Pages (from-to)	1540-1545
Number of pages	6
Journal	Thin Solid Films
Volume	519
Issue number	5
DOIs	https://doi.org/10.1016/j.tsf.2010.06.002
Publication status	Published - Dec 30 2010
Externally published	Yes

Keywords

Epitaxial growth
FeSe
Interfacial stress
Pulsed laser deposition
Superconducting film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Chemistry
Metals and Alloys
Surfaces, Coatings and Films
Surfaces and Interfaces

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10.1016/j.tsf.2010.06.002

Cite this

@article{c6b33c9b0c6a40b5937dd4c8797e4307,

title = "Low-temperature fabrication of superconducting FeSe thin films by pulsed laser deposition",

abstract = "Superconducting FeSe thin films were prepared at a substrate temperature of 320 °C by pulsed laser deposition. X-ray diffraction and transmission electron microscopic analyses showed that highly c-axis-orientated and high-quality films were obtained on various substrate materials, including single-crystal MgO, LaAlO3, SrTiO3 and (100)-Si, and amorphous-SiOx, at such low temperature. From transport measurements all the films showed low-temperature structural phase transition at ∼ 60-90 K and superconducting transition at onset temperature varies from ∼ 7 K to < 2 K, depending on the substrate used. The transport property of FeSe film on Si was found most different from all the others, in spite of their similarity in structural analysis. Chemical analysis demonstrated that Fe and Se homogeneously distributed in the film and the stoichiometry of FeSe and the bonding states of Fe and Se are as well uniform along the film growth direction.",

keywords = "Epitaxial growth, FeSe, Interfacial stress, Pulsed laser deposition, Superconducting film",

author = "Chen, {Ta Kun} and Luo, {Jiu Yong} and Ke, {Chung Ting} and Chang, {Hsian Hong} and Huang, {Tzu Wen} and Yeh, {Kuo Wei} and Chang, {Chung Chieh} and Hsu, {Po Chun} and Wu, {Chun Te} and Wang, {Ming Jye} and Wu, {Mau Kuen}",

note = "Funding Information: This work was partially supported by the National Science Council of Taiwan under Grant NSC-96-2112-M-001-026-MY3 and NSC-98-2119-M-001-025 . The use of Core Facilities of Nanotechnology Center in Eastern Taiwan and of Nanoscience and Nanotechnology in Academia Sinica is acknowledged. ",

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doi = "10.1016/j.tsf.2010.06.002",

language = "English",

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T1 - Low-temperature fabrication of superconducting FeSe thin films by pulsed laser deposition

AU - Chen, Ta Kun

AU - Luo, Jiu Yong

AU - Ke, Chung Ting

AU - Chang, Hsian Hong

AU - Huang, Tzu Wen

AU - Yeh, Kuo Wei

AU - Chang, Chung Chieh

AU - Hsu, Po Chun

AU - Wu, Chun Te

AU - Wang, Ming Jye

AU - Wu, Mau Kuen

N1 - Funding Information: This work was partially supported by the National Science Council of Taiwan under Grant NSC-96-2112-M-001-026-MY3 and NSC-98-2119-M-001-025 . The use of Core Facilities of Nanotechnology Center in Eastern Taiwan and of Nanoscience and Nanotechnology in Academia Sinica is acknowledged.

PY - 2010/12/30

Y1 - 2010/12/30

N2 - Superconducting FeSe thin films were prepared at a substrate temperature of 320 °C by pulsed laser deposition. X-ray diffraction and transmission electron microscopic analyses showed that highly c-axis-orientated and high-quality films were obtained on various substrate materials, including single-crystal MgO, LaAlO3, SrTiO3 and (100)-Si, and amorphous-SiOx, at such low temperature. From transport measurements all the films showed low-temperature structural phase transition at ∼ 60-90 K and superconducting transition at onset temperature varies from ∼ 7 K to < 2 K, depending on the substrate used. The transport property of FeSe film on Si was found most different from all the others, in spite of their similarity in structural analysis. Chemical analysis demonstrated that Fe and Se homogeneously distributed in the film and the stoichiometry of FeSe and the bonding states of Fe and Se are as well uniform along the film growth direction.

AB - Superconducting FeSe thin films were prepared at a substrate temperature of 320 °C by pulsed laser deposition. X-ray diffraction and transmission electron microscopic analyses showed that highly c-axis-orientated and high-quality films were obtained on various substrate materials, including single-crystal MgO, LaAlO3, SrTiO3 and (100)-Si, and amorphous-SiOx, at such low temperature. From transport measurements all the films showed low-temperature structural phase transition at ∼ 60-90 K and superconducting transition at onset temperature varies from ∼ 7 K to < 2 K, depending on the substrate used. The transport property of FeSe film on Si was found most different from all the others, in spite of their similarity in structural analysis. Chemical analysis demonstrated that Fe and Se homogeneously distributed in the film and the stoichiometry of FeSe and the bonding states of Fe and Se are as well uniform along the film growth direction.

KW - Epitaxial growth

KW - FeSe

KW - Interfacial stress

KW - Pulsed laser deposition

KW - Superconducting film

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Low-temperature fabrication of superconducting FeSe thin films by pulsed laser deposition

Abstract

Keywords

ASJC Scopus subject areas

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