Ion-bombarded and plasma-passivated charge storage layer for SONOS-type nonvolatile memory

Sheng Hsien Liu; Chi Chang Wu; Wen Luh Yang; Yu Hsien Lin; Tien Sheng Chao

doi:10.1109/TED.2014.2341629

Ion-bombarded and plasma-passivated charge storage layer for SONOS-type nonvolatile memory

Sheng Hsien Liu, Chi Chang Wu, Wen Luh Yang, Yu Hsien Lin, Tien Sheng Chao

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

This paper examined the application of ion bombardment (IB) and NH ₃ plasma treatment (PT) techniques in fabricating a high-performance Si₃N₄ charge storage layer. The IB technique can be used for creating numerous additional trap sites in the storage layer to enhance charge trapping efficiency and also causes changes in trap centroid location. In addition, the effect of centroid location on operation efficiency and reliability was investigated. Using gate-sensing and channel-sensing analysis, the changes in centroid location were demonstrated. In addition, the energy-level distribution of trap sites was clearly delineated by performing discharge-based multipulse analysis. The NH₃ PT technique can substantially passivate IB-induced shallow trap sites to increase data retention time. The influence of the NH₃ PT time on the memory characteristics of an IB-induced Si₃N₄ sample was investigated. The optimal characteristics of an ion-bombarded and plasma-passivated Si ₃N₄ storage layer are presented. Compared with the conventional Si₃N₄ storage layer, the optimal ion-bombarded and plasma-passivated Si₃N₄ sample exhibited higher operation efficiency and superior reliability.

Original language	English
Article number	6872548
Pages (from-to)	3179-3185
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	9
DOIs	https://doi.org/10.1109/TED.2014.2341629
Publication status	Published - Sept 2014

Keywords

Charge storage layer
Ion bombardment (IB)
NH plasma treatment (PT)
flash memory

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2014.2341629

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title = "Ion-bombarded and plasma-passivated charge storage layer for SONOS-type nonvolatile memory",

abstract = "This paper examined the application of ion bombardment (IB) and NH 3 plasma treatment (PT) techniques in fabricating a high-performance Si3N4 charge storage layer. The IB technique can be used for creating numerous additional trap sites in the storage layer to enhance charge trapping efficiency and also causes changes in trap centroid location. In addition, the effect of centroid location on operation efficiency and reliability was investigated. Using gate-sensing and channel-sensing analysis, the changes in centroid location were demonstrated. In addition, the energy-level distribution of trap sites was clearly delineated by performing discharge-based multipulse analysis. The NH3 PT technique can substantially passivate IB-induced shallow trap sites to increase data retention time. The influence of the NH3 PT time on the memory characteristics of an IB-induced Si3N4 sample was investigated. The optimal characteristics of an ion-bombarded and plasma-passivated Si 3N4 storage layer are presented. Compared with the conventional Si3N4 storage layer, the optimal ion-bombarded and plasma-passivated Si3N4 sample exhibited higher operation efficiency and superior reliability.",

keywords = "Charge storage layer, Ion bombardment (IB), NH plasma treatment (PT), flash memory",

author = "Liu, {Sheng Hsien} and Wu, {Chi Chang} and Yang, {Wen Luh} and Lin, {Yu Hsien} and Chao, {Tien Sheng}",

year = "2014",

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T1 - Ion-bombarded and plasma-passivated charge storage layer for SONOS-type nonvolatile memory

AU - Liu, Sheng Hsien

AU - Wu, Chi Chang

AU - Yang, Wen Luh

AU - Lin, Yu Hsien

AU - Chao, Tien Sheng

PY - 2014/9

Y1 - 2014/9

N2 - This paper examined the application of ion bombardment (IB) and NH 3 plasma treatment (PT) techniques in fabricating a high-performance Si3N4 charge storage layer. The IB technique can be used for creating numerous additional trap sites in the storage layer to enhance charge trapping efficiency and also causes changes in trap centroid location. In addition, the effect of centroid location on operation efficiency and reliability was investigated. Using gate-sensing and channel-sensing analysis, the changes in centroid location were demonstrated. In addition, the energy-level distribution of trap sites was clearly delineated by performing discharge-based multipulse analysis. The NH3 PT technique can substantially passivate IB-induced shallow trap sites to increase data retention time. The influence of the NH3 PT time on the memory characteristics of an IB-induced Si3N4 sample was investigated. The optimal characteristics of an ion-bombarded and plasma-passivated Si 3N4 storage layer are presented. Compared with the conventional Si3N4 storage layer, the optimal ion-bombarded and plasma-passivated Si3N4 sample exhibited higher operation efficiency and superior reliability.

AB - This paper examined the application of ion bombardment (IB) and NH 3 plasma treatment (PT) techniques in fabricating a high-performance Si3N4 charge storage layer. The IB technique can be used for creating numerous additional trap sites in the storage layer to enhance charge trapping efficiency and also causes changes in trap centroid location. In addition, the effect of centroid location on operation efficiency and reliability was investigated. Using gate-sensing and channel-sensing analysis, the changes in centroid location were demonstrated. In addition, the energy-level distribution of trap sites was clearly delineated by performing discharge-based multipulse analysis. The NH3 PT technique can substantially passivate IB-induced shallow trap sites to increase data retention time. The influence of the NH3 PT time on the memory characteristics of an IB-induced Si3N4 sample was investigated. The optimal characteristics of an ion-bombarded and plasma-passivated Si 3N4 storage layer are presented. Compared with the conventional Si3N4 storage layer, the optimal ion-bombarded and plasma-passivated Si3N4 sample exhibited higher operation efficiency and superior reliability.

KW - Charge storage layer

KW - Ion bombardment (IB)

KW - NH plasma treatment (PT)

KW - flash memory

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Ion-bombarded and plasma-passivated charge storage layer for SONOS-type nonvolatile memory

Abstract

Keywords

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