Abstract
Raman spectrum of a graphene edge, showing the main raman features, the D band(∼1350 cm-1), G band(∼1580 cm-1) and 2D band (∼2700 cm-1) taken with a laser excitation energy of 2.41 eV. D band is not easy to be found in the good structure of the graphite, generally D band and G band integral intensity ratio ID/IG, to determine whether the carbon material defects and the crystallization of the pros and cons, but D band is usually also the incident light wavelength with the impact of the incident area. The insert voltage conditions with H2SO4 and KOH is demo in the study. The D band and G band integral intensity ratio ID/IG is equal 1.08, and FWHM(cm-1) is equal 97.6 value.
Original language | English |
---|---|
Title of host publication | EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1-2 |
Number of pages | 2 |
Volume | 2017-January |
ISBN (Electronic) | 9781538629079 |
DOIs | |
Publication status | Published - Dec 1 2017 |
Externally published | Yes |
Event | 13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, Taiwan Duration: Oct 18 2017 → Oct 20 2017 |
Conference
Conference | 13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 |
---|---|
Country/Territory | Taiwan |
City | Hsinchu |
Period | 10/18/17 → 10/20/17 |
Keywords
- Graphene
- KOH
- Raman spectrum
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Hardware and Architecture
- Electrical and Electronic Engineering