Investigated Raman Spectroscopy of Graphene material properties

Jian Chiun Liou; Yi Tsung Chang; Kuan Wen Fang

doi:10.1109/EDSSC.2017.8333243

Investigated Raman Spectroscopy of Graphene material properties

Jian Chiun Liou, Yi Tsung Chang, Kuan Wen Fang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Raman spectrum of a graphene edge, showing the main raman features, the D band(∼1350 cm^-1), G band(∼1580 cm^-1) and 2D band (∼2700 cm^-1) taken with a laser excitation energy of 2.41 eV. D band is not easy to be found in the good structure of the graphite, generally D band and G band integral intensity ratio I_D/I_G, to determine whether the carbon material defects and the crystallization of the pros and cons, but D band is usually also the incident light wavelength with the impact of the incident area. The insert voltage conditions with H₂SO₄ and KOH is demo in the study. The D band and G band integral intensity ratio I_D/I_G is equal 1.08, and FWHM(cm-1) is equal 97.6 value.

Original language	English
Title of host publication	EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
Volume	2017-January
ISBN (Electronic)	9781538629079
DOIs	https://doi.org/10.1109/EDSSC.2017.8333243
Publication status	Published - Dec 1 2017
Externally published	Yes
Event	13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, Taiwan Duration: Oct 18 2017 → Oct 20 2017

Publication series

Name	EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
Volume	2017-January

Conference

Conference	13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
Country/Territory	Taiwan
City	Hsinchu
Period	10/18/17 → 10/20/17

Keywords

Graphene
KOH
Raman spectrum

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDSSC.2017.8333243

Cite this

Liou, J. C., Chang, Y. T., & Fang, K. W. (2017). Investigated Raman Spectroscopy of Graphene material properties. In EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits (Vol. 2017-January, pp. 1-2). (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2017.8333243

Investigated Raman Spectroscopy of Graphene material properties. / Liou, Jian Chiun; Chang, Yi Tsung; Fang, Kuan Wen.
EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Vol. 2017-January Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-2 (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liou, JC, Chang, YT & Fang, KW 2017, Investigated Raman Spectroscopy of Graphene material properties. in EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. vol. 2017-January, EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017, Hsinchu, Taiwan, 10/18/17. https://doi.org/10.1109/EDSSC.2017.8333243

Liou JC, Chang YT, Fang KW. Investigated Raman Spectroscopy of Graphene material properties. In EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Vol. 2017-January. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-2. (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits). doi: 10.1109/EDSSC.2017.8333243

Liou, Jian Chiun ; Chang, Yi Tsung ; Fang, Kuan Wen. / Investigated Raman Spectroscopy of Graphene material properties. EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Vol. 2017-January Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-2 (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits).

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title = "Investigated Raman Spectroscopy of Graphene material properties",

abstract = "Raman spectrum of a graphene edge, showing the main raman features, the D band(∼1350 cm-1), G band(∼1580 cm-1) and 2D band (∼2700 cm-1) taken with a laser excitation energy of 2.41 eV. D band is not easy to be found in the good structure of the graphite, generally D band and G band integral intensity ratio ID/IG, to determine whether the carbon material defects and the crystallization of the pros and cons, but D band is usually also the incident light wavelength with the impact of the incident area. The insert voltage conditions with H2SO4 and KOH is demo in the study. The D band and G band integral intensity ratio ID/IG is equal 1.08, and FWHM(cm-1) is equal 97.6 value.",

keywords = "Graphene, KOH, Raman spectrum",

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N2 - Raman spectrum of a graphene edge, showing the main raman features, the D band(∼1350 cm-1), G band(∼1580 cm-1) and 2D band (∼2700 cm-1) taken with a laser excitation energy of 2.41 eV. D band is not easy to be found in the good structure of the graphite, generally D band and G band integral intensity ratio ID/IG, to determine whether the carbon material defects and the crystallization of the pros and cons, but D band is usually also the incident light wavelength with the impact of the incident area. The insert voltage conditions with H2SO4 and KOH is demo in the study. The D band and G band integral intensity ratio ID/IG is equal 1.08, and FWHM(cm-1) is equal 97.6 value.

AB - Raman spectrum of a graphene edge, showing the main raman features, the D band(∼1350 cm-1), G band(∼1580 cm-1) and 2D band (∼2700 cm-1) taken with a laser excitation energy of 2.41 eV. D band is not easy to be found in the good structure of the graphite, generally D band and G band integral intensity ratio ID/IG, to determine whether the carbon material defects and the crystallization of the pros and cons, but D band is usually also the incident light wavelength with the impact of the incident area. The insert voltage conditions with H2SO4 and KOH is demo in the study. The D band and G band integral intensity ratio ID/IG is equal 1.08, and FWHM(cm-1) is equal 97.6 value.

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Investigated Raman Spectroscopy of Graphene material properties

Abstract

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Keywords

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