Interfacial reactions and electrical properties of hafnium-based thin films in Cu/barrier/n⁺-p junction diodes

Engineering & Materials Science

• Annealing 47%
• Atoms 8%
• Copper 38%
• Current density 7%
• Diffusion barriers 23%
• Diodes 58%
• Electric properties 67%
• Hafnium 100%
• Hafnium compounds 37%
• Hot Temperature 3%
• Leakage currents 8%
• Magnetron sputtering 10%
• Nitrides 9%
• Nitrogen 58%
• Phase transitions 16%
• Reactive sputtering 12%
• Scanning electron microscopy 6%
• Sheet resistance 10%
• Silicides 21%
• Silicon wafers 9%
• Substrates 11%
• Surface chemistry 82%
• Temperature 6%
• Thermodynamic stability 24%
• Thin films 59%
• Transmission electron microscopy 8%
• X ray diffraction 7%
• X ray photoelectron spectroscopy 9%

Physics & Astronomy

• annealing 22%
• atoms 3%
• barrier layers 13%
• blanks 7%
• copper 27%
• current density 4%
• diffraction 3%
• electric contacts 11%
• electrical properties 46%
• electrical resistivity 3%
• hafnium 78%
• hafnium compounds 25%
• integrity 6%
• junction diodes 82%
• leakage 5%
• magnetron sputtering 5%
• nitrides 5%
• nitrogen 37%
• p-n junctions 65%
• penetration 5%
• performance 5%
• phase transformations 11%
• photoelectron spectroscopy 5%
• scanning electron microscopy 4%
• silicides 13%
• silicon 3%
• temperature 1%
• thermal stability 16%
• thin films 32%
• transmission electron microscopy 4%
• wafers 4%
• x rays 5%

Chemical Compounds

• Current Density 6%
• Diffusion 11%
• Diffusion Barrier 22%
• Electrical Property 53%
• Hafnium Atom 32%
• Hexagonal Space Group 7%
• Leakage Current 11%
• Liquid Film 30%
• Nitride 8%
• Nitrogen 38%
• Reaction Property 89%
• Resistance 5%
• Scanning Electron Microscopy 5%
• Sheet Resistance 10%
• Sputtering 9%
• Surface Chemistry 57%
• Thermal Stability 17%
• X-Ray Diffraction 4%
• X-Ray Photoelectron Spectroscopy 6%