Influence of the trench depths of grooved GaN templates on the characteristics of overgrown AlGaN films

Cheng Liang Wang; Wei Lin Wang; Wei Tsai Liao; Jyh Rong Gong; Chung Kwei Lin; Tai Yuan Lin

doi:10.1016/j.jcrysgro.2006.10.164

Influence of the trench depths of grooved GaN templates on the characteristics of overgrown AlGaN films

Cheng Liang Wang, Wei Lin Wang, Wei Tsai Liao, Jyh Rong Gong, Chung Kwei Lin, Tai Yuan Lin

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this study, the properties of Al_0.18Ga_0.82N films grown on stripe-grooved GaN templates with different trench depths have been investigated by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), double crystal X-ray diffractometer (DCXRD), and photoluminescence (PL) measurement. Based upon the results of FESEM observations, a crack-free Al_0.18Ga_0.82N surface has been achieved using a GaN template with 1-μm-deep trenches. Moreover, from the observations of TEM, the density of threading dislocations in Al_0.18Ga_0.82N film was found to reduce during the lateral growth on the trench regions. DCXRD and PL both measurements were carried out to determine the quality of the Al_0.18Ga_0.82N films. The full-width at half-maxima of double crystal X-ray rocking curve and PL spectrum are the smallest, respectively, for the Al_0.18Ga_0.82N film grown on grooved GaN template having 1 μm-deep trenches. It is believed that the use of the grooved GaN templates effectively improves the quality of the overgrown Al_0.18Ga_0.82N films.

Original language	English
Pages (from-to)	339-344
Number of pages	6
Journal	Journal of Crystal Growth
Volume	297
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.10.164
Publication status	Published - Dec 29 2006
Externally published	Yes

Keywords

A1. Trench depth
A3. Grooved GaN template
A3. Lateral growth
A3. Metalorganic chemical vapor deposition
Al. Dislocations
B2. AlGaN

ASJC Scopus subject areas

Condensed Matter Physics
Materials Chemistry
Inorganic Chemistry

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10.1016/j.jcrysgro.2006.10.164

Cite this

@article{10257c3b5a83422ba1d8af1fe98a0148,

title = "Influence of the trench depths of grooved GaN templates on the characteristics of overgrown AlGaN films",

abstract = "In this study, the properties of Al0.18Ga0.82N films grown on stripe-grooved GaN templates with different trench depths have been investigated by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), double crystal X-ray diffractometer (DCXRD), and photoluminescence (PL) measurement. Based upon the results of FESEM observations, a crack-free Al0.18Ga0.82N surface has been achieved using a GaN template with 1-μm-deep trenches. Moreover, from the observations of TEM, the density of threading dislocations in Al0.18Ga0.82N film was found to reduce during the lateral growth on the trench regions. DCXRD and PL both measurements were carried out to determine the quality of the Al0.18Ga0.82N films. The full-width at half-maxima of double crystal X-ray rocking curve and PL spectrum are the smallest, respectively, for the Al0.18Ga0.82N film grown on grooved GaN template having 1 μm-deep trenches. It is believed that the use of the grooved GaN templates effectively improves the quality of the overgrown Al0.18Ga0.82N films.",

keywords = "A1. Trench depth, A3. Grooved GaN template, A3. Lateral growth, A3. Metalorganic chemical vapor deposition, Al. Dislocations, B2. AlGaN",

author = "Wang, {Cheng Liang} and Wang, {Wei Lin} and Liao, {Wei Tsai} and Gong, {Jyh Rong} and Lin, {Chung Kwei} and Lin, {Tai Yuan}",

note = "Funding Information: The authors would like to thank Miss Y. C. Chi at Feng Chia university and Mr. S. Y. Chang at National Chung Hsing university for providing precision instruments. This work was supported in part by the National Science Council of Taiwan, Republic of China with Contract number NSC95-2112-M-005-013-MY2.",

year = "2006",

month = dec,

day = "29",

doi = "10.1016/j.jcrysgro.2006.10.164",

language = "English",

volume = "297",

pages = "339--344",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - Influence of the trench depths of grooved GaN templates on the characteristics of overgrown AlGaN films

AU - Wang, Cheng Liang

AU - Wang, Wei Lin

AU - Liao, Wei Tsai

AU - Gong, Jyh Rong

AU - Lin, Chung Kwei

AU - Lin, Tai Yuan

N1 - Funding Information: The authors would like to thank Miss Y. C. Chi at Feng Chia university and Mr. S. Y. Chang at National Chung Hsing university for providing precision instruments. This work was supported in part by the National Science Council of Taiwan, Republic of China with Contract number NSC95-2112-M-005-013-MY2.

PY - 2006/12/29

Y1 - 2006/12/29

N2 - In this study, the properties of Al0.18Ga0.82N films grown on stripe-grooved GaN templates with different trench depths have been investigated by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), double crystal X-ray diffractometer (DCXRD), and photoluminescence (PL) measurement. Based upon the results of FESEM observations, a crack-free Al0.18Ga0.82N surface has been achieved using a GaN template with 1-μm-deep trenches. Moreover, from the observations of TEM, the density of threading dislocations in Al0.18Ga0.82N film was found to reduce during the lateral growth on the trench regions. DCXRD and PL both measurements were carried out to determine the quality of the Al0.18Ga0.82N films. The full-width at half-maxima of double crystal X-ray rocking curve and PL spectrum are the smallest, respectively, for the Al0.18Ga0.82N film grown on grooved GaN template having 1 μm-deep trenches. It is believed that the use of the grooved GaN templates effectively improves the quality of the overgrown Al0.18Ga0.82N films.

AB - In this study, the properties of Al0.18Ga0.82N films grown on stripe-grooved GaN templates with different trench depths have been investigated by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), double crystal X-ray diffractometer (DCXRD), and photoluminescence (PL) measurement. Based upon the results of FESEM observations, a crack-free Al0.18Ga0.82N surface has been achieved using a GaN template with 1-μm-deep trenches. Moreover, from the observations of TEM, the density of threading dislocations in Al0.18Ga0.82N film was found to reduce during the lateral growth on the trench regions. DCXRD and PL both measurements were carried out to determine the quality of the Al0.18Ga0.82N films. The full-width at half-maxima of double crystal X-ray rocking curve and PL spectrum are the smallest, respectively, for the Al0.18Ga0.82N film grown on grooved GaN template having 1 μm-deep trenches. It is believed that the use of the grooved GaN templates effectively improves the quality of the overgrown Al0.18Ga0.82N films.

KW - A1. Trench depth

KW - A3. Grooved GaN template

KW - A3. Lateral growth

KW - A3. Metalorganic chemical vapor deposition

KW - Al. Dislocations

KW - B2. AlGaN

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DO - 10.1016/j.jcrysgro.2006.10.164

M3 - Article

AN - SCOPUS:33845578407

SN - 0022-0248

VL - 297

SP - 339

EP - 344

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2

ER -

Influence of the trench depths of grooved GaN templates on the characteristics of overgrown AlGaN films

Abstract

Keywords

ASJC Scopus subject areas

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