Improving the electrical integrity of Cu-CoSi2 contacted n+p junction diodes using nitrogen-incorporated Ta films as a diffusion barrier

Wen Luh Yang; Wen Fa Wu; Hsin Chiang You; Keng Liang Ou; Tan Fu Lei; Chang Pin Chou

doi:10.1109/TED.2002.804692

Improving the electrical integrity of Cu-CoSi₂ contacted n⁺p junction diodes using nitrogen-incorporated Ta films as a diffusion barrier

Wen Luh Yang, Wen Fa Wu, Hsin Chiang You, Keng Liang Ou, Tan Fu Lei, Chang Pin Chou

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The study on improving the electrical integrity of Cu-CoSi₂ contacted-junction diodes by using the reactively sputtered TaN_x as a diffusion barrier is presented in this paper. In this study, the Cu(300 nm)-CoSi₂ (50 nm)/n⁺ p junction diodes were intact with respect to metallurgical reaction up to a 350°C thermal annealing while the electrical characteristics started to degrade after annealing at 300 °C in N₂ ambient for 30 min. With the addition of a 50-nm-thick TaNs diffusion barrier between Cu and CoSi₂, the junction diodes were able to sustain annealing up to 600 °C without losing the basic integrity of the device characteristics, and no metallurgical reaction could be observed even after a 750 °C annealing in furnace. In addition, the structure of TaN_x layers deposited on CoSi₂ at various nitrogen flow rates has been investigated. The TaNs film with small grain sizes deposited at nitrogen flow ratios exceeding 10% shows better barrier capability against Cu diffusion than the others.

Original language	English
Pages (from-to)	1947-1954
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	49
Issue number	11
DOIs	https://doi.org/10.1109/TED.2002.804692
Publication status	Published - Nov 2002
Externally published	Yes

Keywords

Cobalt
Copper
Diffusion barrier
Junction
Nitrogen
Tantalum

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2002.804692

Cite this

@article{981dc4282a8e4564a9228368b25f0fee,

title = "Improving the electrical integrity of Cu-CoSi2 contacted n+p junction diodes using nitrogen-incorporated Ta films as a diffusion barrier",

abstract = "The study on improving the electrical integrity of Cu-CoSi2 contacted-junction diodes by using the reactively sputtered TaNx as a diffusion barrier is presented in this paper. In this study, the Cu(300 nm)-CoSi2 (50 nm)/n+ p junction diodes were intact with respect to metallurgical reaction up to a 350°C thermal annealing while the electrical characteristics started to degrade after annealing at 300 °C in N2 ambient for 30 min. With the addition of a 50-nm-thick TaNs diffusion barrier between Cu and CoSi2, the junction diodes were able to sustain annealing up to 600 °C without losing the basic integrity of the device characteristics, and no metallurgical reaction could be observed even after a 750 °C annealing in furnace. In addition, the structure of TaNx layers deposited on CoSi2 at various nitrogen flow rates has been investigated. The TaNs film with small grain sizes deposited at nitrogen flow ratios exceeding 10% shows better barrier capability against Cu diffusion than the others.",

keywords = "Cobalt, Copper, Diffusion barrier, Junction, Nitrogen, Tantalum",

author = "Yang, {Wen Luh} and Wu, {Wen Fa} and You, {Hsin Chiang} and Ou, {Keng Liang} and Lei, {Tan Fu} and Chou, {Chang Pin}",

note = "Funding Information: Manuscript received April 24, 2002. This work was supported in part by the National Science Council, Taiwan, R.O.C., under Contract NSC-90-2215-E-035-007 and the Feng Chia University (FCU-RD-88-01). The review of this paper was arranged by Editor R. Shrivastava. W. L. Yang is with the Department of Electronic Engineering, Feng Chia University, Taichung, Taiwan, R.O.C. (e-mail: [email protected]). W.-F. Wu is with National Nano Device Laboratories, Hsinchu, Taiwan, R.O.C. H. C. You and T. F. Lei are with the Institute and Department of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C. K.-L. Ou and C.-P. Chou are with the Institute and Department of Mechanical Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O.C. Digital Object Identifier 10.1109/TED.2002.804692 Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.",

year = "2002",

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T1 - Improving the electrical integrity of Cu-CoSi2 contacted n+p junction diodes using nitrogen-incorporated Ta films as a diffusion barrier

AU - Yang, Wen Luh

AU - Wu, Wen Fa

AU - You, Hsin Chiang

AU - Ou, Keng Liang

AU - Lei, Tan Fu

AU - Chou, Chang Pin

N1 - Funding Information: Manuscript received April 24, 2002. This work was supported in part by the National Science Council, Taiwan, R.O.C., under Contract NSC-90-2215-E-035-007 and the Feng Chia University (FCU-RD-88-01). The review of this paper was arranged by Editor R. Shrivastava. W. L. Yang is with the Department of Electronic Engineering, Feng Chia University, Taichung, Taiwan, R.O.C. (e-mail: [email protected]). W.-F. Wu is with National Nano Device Laboratories, Hsinchu, Taiwan, R.O.C. H. C. You and T. F. Lei are with the Institute and Department of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C. K.-L. Ou and C.-P. Chou are with the Institute and Department of Mechanical Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O.C. Digital Object Identifier 10.1109/TED.2002.804692 Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.

PY - 2002/11

Y1 - 2002/11

N2 - The study on improving the electrical integrity of Cu-CoSi2 contacted-junction diodes by using the reactively sputtered TaNx as a diffusion barrier is presented in this paper. In this study, the Cu(300 nm)-CoSi2 (50 nm)/n+ p junction diodes were intact with respect to metallurgical reaction up to a 350°C thermal annealing while the electrical characteristics started to degrade after annealing at 300 °C in N2 ambient for 30 min. With the addition of a 50-nm-thick TaNs diffusion barrier between Cu and CoSi2, the junction diodes were able to sustain annealing up to 600 °C without losing the basic integrity of the device characteristics, and no metallurgical reaction could be observed even after a 750 °C annealing in furnace. In addition, the structure of TaNx layers deposited on CoSi2 at various nitrogen flow rates has been investigated. The TaNs film with small grain sizes deposited at nitrogen flow ratios exceeding 10% shows better barrier capability against Cu diffusion than the others.

AB - The study on improving the electrical integrity of Cu-CoSi2 contacted-junction diodes by using the reactively sputtered TaNx as a diffusion barrier is presented in this paper. In this study, the Cu(300 nm)-CoSi2 (50 nm)/n+ p junction diodes were intact with respect to metallurgical reaction up to a 350°C thermal annealing while the electrical characteristics started to degrade after annealing at 300 °C in N2 ambient for 30 min. With the addition of a 50-nm-thick TaNs diffusion barrier between Cu and CoSi2, the junction diodes were able to sustain annealing up to 600 °C without losing the basic integrity of the device characteristics, and no metallurgical reaction could be observed even after a 750 °C annealing in furnace. In addition, the structure of TaNx layers deposited on CoSi2 at various nitrogen flow rates has been investigated. The TaNs film with small grain sizes deposited at nitrogen flow ratios exceeding 10% shows better barrier capability against Cu diffusion than the others.

KW - Cobalt

KW - Copper

KW - Diffusion barrier

KW - Junction

KW - Nitrogen

KW - Tantalum

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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