Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories

Yu Ping Hsiao; Wen Luh Yang; Li Min Lin; Fun Tat Chin; Yu Hsien Lin; Ke Luen Yang; Chi Chang Wu

doi:10.1016/j.microrel.2015.08.013

Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories

Yu Ping Hsiao, Wen Luh Yang, Li Min Lin, Fun Tat Chin, Yu Hsien Lin, Ke Luen Yang, Chi Chang Wu

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this study, a polyimide (PI) thin film was synthesized as a resistive layer for creating resistive random access memory (ReRAM). The switch between high- and low-resistance states is caused by the formation and dissociation of dipole direction and Schottky barrier. The impact of imidization on memory properties was evaluated in detail by clarifying the transmission mechanism, and reliability properties including retention and endurance were improved using thermal imidization. In addition, the proposed PI-based ReRAM demonstrated superior performance levels compared with those of electrochemical-metallization-based and valence-change-based ReRAMs, including higher R_ON/R_OFF ratio (> 10⁷) and lower operation energy (< 0.16 MV/cm).

Original language	English
Pages (from-to)	2188-2197
Number of pages	10
Journal	Microelectronics Reliability
Volume	55
Issue number	11
DOIs	https://doi.org/10.1016/j.microrel.2015.08.013
Publication status	Published - 2015

Keywords

Polyimide (PI)
Resistive random access memory (ReRAM)
Thermal imidization

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2015.08.013

Cite this

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title = "Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories",

abstract = "In this study, a polyimide (PI) thin film was synthesized as a resistive layer for creating resistive random access memory (ReRAM). The switch between high- and low-resistance states is caused by the formation and dissociation of dipole direction and Schottky barrier. The impact of imidization on memory properties was evaluated in detail by clarifying the transmission mechanism, and reliability properties including retention and endurance were improved using thermal imidization. In addition, the proposed PI-based ReRAM demonstrated superior performance levels compared with those of electrochemical-metallization-based and valence-change-based ReRAMs, including higher RON/ROFF ratio (> 107) and lower operation energy (< 0.16 MV/cm).",

keywords = "Polyimide (PI), Resistive random access memory (ReRAM), Thermal imidization",

author = "Hsiao, {Yu Ping} and Yang, {Wen Luh} and Lin, {Li Min} and Chin, {Fun Tat} and Lin, {Yu Hsien} and Yang, {Ke Luen} and Wu, {Chi Chang}",

note = "Funding Information: This study was supported financially by the National Science Council, Taiwan , through the grant numbers NSC 102-2221-E-035-065-MY3 and MOST 104-2221-E-038-009 . In addition, the authors are grateful to the National Nano Device Labs for support in processes, and the National Center for High-Performance Computing for their time and computer facilities. Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd. All rights reserved.",

year = "2015",

doi = "10.1016/j.microrel.2015.08.013",

language = "English",

volume = "55",

pages = "2188--2197",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "11",

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TY - JOUR

T1 - Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories

AU - Hsiao, Yu Ping

AU - Yang, Wen Luh

AU - Lin, Li Min

AU - Chin, Fun Tat

AU - Lin, Yu Hsien

AU - Yang, Ke Luen

AU - Wu, Chi Chang

N1 - Funding Information: This study was supported financially by the National Science Council, Taiwan , through the grant numbers NSC 102-2221-E-035-065-MY3 and MOST 104-2221-E-038-009 . In addition, the authors are grateful to the National Nano Device Labs for support in processes, and the National Center for High-Performance Computing for their time and computer facilities. Publisher Copyright: © 2015 Elsevier Ltd. All rights reserved.

PY - 2015

Y1 - 2015

N2 - In this study, a polyimide (PI) thin film was synthesized as a resistive layer for creating resistive random access memory (ReRAM). The switch between high- and low-resistance states is caused by the formation and dissociation of dipole direction and Schottky barrier. The impact of imidization on memory properties was evaluated in detail by clarifying the transmission mechanism, and reliability properties including retention and endurance were improved using thermal imidization. In addition, the proposed PI-based ReRAM demonstrated superior performance levels compared with those of electrochemical-metallization-based and valence-change-based ReRAMs, including higher RON/ROFF ratio (> 107) and lower operation energy (< 0.16 MV/cm).

AB - In this study, a polyimide (PI) thin film was synthesized as a resistive layer for creating resistive random access memory (ReRAM). The switch between high- and low-resistance states is caused by the formation and dissociation of dipole direction and Schottky barrier. The impact of imidization on memory properties was evaluated in detail by clarifying the transmission mechanism, and reliability properties including retention and endurance were improved using thermal imidization. In addition, the proposed PI-based ReRAM demonstrated superior performance levels compared with those of electrochemical-metallization-based and valence-change-based ReRAMs, including higher RON/ROFF ratio (> 107) and lower operation energy (< 0.16 MV/cm).

KW - Polyimide (PI)

KW - Resistive random access memory (ReRAM)

KW - Thermal imidization

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DO - 10.1016/j.microrel.2015.08.013

M3 - Article

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SN - 0026-2714

VL - 55

SP - 2188

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JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 11

ER -

Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories

Abstract

Keywords

ASJC Scopus subject areas

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