Improving high-resistance state uniformity and leakage current for polyimide-based resistive switching memory by rubbing post-treatment

Engineering

• Resistive 100%
• High Resistance State 100%
• Thin Films 66%
• Resistive Random Access Memory 66%
• Power Density 66%
• Experimental Result 33%
• Electric Power Utilization 33%
• Reset Process 33%
• Current Ratio 33%
• Set Process 33%
• Device Performance 33%

Material Science

• Polyimide 100%
• Thin Films 50%
• Density 50%
• Resistive Random-Access Memory 50%

Earth and Planetary Sciences

• Polyimide 100%
• Random Access Memory 50%
• Thin Films 50%
• Work Function 25%