Abstract
We report the influence of short-period superlattice (SPSL)-inserted structures in the underlying undoped GaN on the characteristics of GaN-based light-emitting diodes (LEDs). The measurements of current-voltage (I-V) curves indicate that GaN-based LEDs having pseudomorphic Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures exhibit improvements in device characteristics with the best LED being inserted with two sets of five-pair Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL structure. Based upon the results of etch pit counts, double-crystal X-ray diffraction measurements and transmission electron microscopic observations of the GaN-based LEDs, it was found that the Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures tended to serve as threading dislocation filters in the LEDs so that the improved I-V characteristics were achieved.
Original language | English |
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Pages (from-to) | 1497-1499 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 18 |
Issue number | 14 |
DOIs | |
Publication status | Published - Jul 15 2006 |
Externally published | Yes |
Keywords
- GaN
- Light-emitting diode (LED)
- Short-period superlattice (SPSL)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering