Improved TaN barrier layer against Cu diffusion by formation of an amorphous layer using plasma treatment

Keng Liang Ou; Wen Fa Wu; Chang Pin Chou; Shi Yung Chiou; Chi Chang Wu

doi:10.1116/1.1511214

Improved TaN barrier layer against Cu diffusion by formation of an amorphous layer using plasma treatment

Keng Liang Ou, Wen Fa Wu, Chang Pin Chou, Shi Yung Chiou, Chi Chang Wu

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

The effectiveness of tantalum nitride with N₂ or O₂ plasma treatment as a diffusion barrier between copper and silicon were investigated. As such, an amorphous layer was found to form on the surface of the TaN film after the plasma treatment. The oxygen and nitrogen bonding states were observed for O₂ and N₂ plasma-treated TaN films. Thus, thermal stabilities of plasma-treated barriers TaN(N)/TaN and TaN(O)/TaN were said to be better than those of untreated barriers TaN(10 nm) and TaN(50 nm).

Original language	English
Pages (from-to)	2154-2161
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	5
DOIs	https://doi.org/10.1116/1.1511214
Publication status	Published - Sept 2002
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.1511214

Cite this

@article{80ff907aa949427ab9dc52df2d2fd448,

title = "Improved TaN barrier layer against Cu diffusion by formation of an amorphous layer using plasma treatment",

abstract = "The effectiveness of tantalum nitride with N2 or O2 plasma treatment as a diffusion barrier between copper and silicon were investigated. As such, an amorphous layer was found to form on the surface of the TaN film after the plasma treatment. The oxygen and nitrogen bonding states were observed for O2 and N2 plasma-treated TaN films. Thus, thermal stabilities of plasma-treated barriers TaN(N)/TaN and TaN(O)/TaN were said to be better than those of untreated barriers TaN(10 nm) and TaN(50 nm).",

author = "Ou, {Keng Liang} and Wu, {Wen Fa} and Chou, {Chang Pin} and Chiou, {Shi Yung} and Wu, {Chi Chang}",

year = "2002",

month = sep,

doi = "10.1116/1.1511214",

language = "English",

volume = "20",

pages = "2154--2161",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "5",

}

TY - JOUR

T1 - Improved TaN barrier layer against Cu diffusion by formation of an amorphous layer using plasma treatment

AU - Ou, Keng Liang

AU - Wu, Wen Fa

AU - Chou, Chang Pin

AU - Chiou, Shi Yung

AU - Wu, Chi Chang

PY - 2002/9

Y1 - 2002/9

N2 - The effectiveness of tantalum nitride with N2 or O2 plasma treatment as a diffusion barrier between copper and silicon were investigated. As such, an amorphous layer was found to form on the surface of the TaN film after the plasma treatment. The oxygen and nitrogen bonding states were observed for O2 and N2 plasma-treated TaN films. Thus, thermal stabilities of plasma-treated barriers TaN(N)/TaN and TaN(O)/TaN were said to be better than those of untreated barriers TaN(10 nm) and TaN(50 nm).

AB - The effectiveness of tantalum nitride with N2 or O2 plasma treatment as a diffusion barrier between copper and silicon were investigated. As such, an amorphous layer was found to form on the surface of the TaN film after the plasma treatment. The oxygen and nitrogen bonding states were observed for O2 and N2 plasma-treated TaN films. Thus, thermal stabilities of plasma-treated barriers TaN(N)/TaN and TaN(O)/TaN were said to be better than those of untreated barriers TaN(10 nm) and TaN(50 nm).

UR - http://www.scopus.com/inward/record.url?scp=0036026399&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036026399&partnerID=8YFLogxK

U2 - 10.1116/1.1511214

DO - 10.1116/1.1511214

M3 - Article

AN - SCOPUS:0036026399

SN - 1071-1023

VL - 20

SP - 2154

EP - 2161

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

ER -

Improved TaN barrier layer against Cu diffusion by formation of an amorphous layer using plasma treatment

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this